Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators

Schaffer, Zachary; Colombo, Luca; Kochhar, Abhay; Piazza, Gianluca; Mishin, Sergey; Oshmyansky, Yury

doi:10.1109/memsys.2018.8346673

Cited by 9 publications

(1 citation statement)

References 8 publications

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“…There are two types of electrode configurations that are commonly adopted for LVRs. The first type uses interdigital transducer (IDT) electrodes only on one side of piezoelectric film [ 28 , 29 ], while the second type has top and bottom electrodes on both sides of piezoelectric film [ 30 , 31 ]. Depending on the structure of resonators, piezoelectric MEMS LVRs can also be categorized into two types.…”

Section: Introductionmentioning

confidence: 99%

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Lee

Zhang

2020

Sensors

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Over the last two decades, piezoelectric resonant sensors based on micro-electromechanical systems (MEMS) technologies have been extensively studied as such sensors offer several unique benefits, such as small form factor, high sensitivity, low noise performance and fabrication compatibility with mainstream integrated circuit technologies. One key challenge for piezoelectric MEMS resonant sensors is enhancing their quality factors (Qs) to improve the resolution of these resonant sensors. Apart from sensing applications, large values of Qs are also demanded when using piezoelectric MEMS resonators to build high-frequency oscillators and radio frequency (RF) filters due to the fact that high-Q MEMS resonators favor lowering close-to-carrier phase noise in oscillators and sharpening roll-off characteristics in RF filters. Pursuant to boosting Q, it is essential to elucidate the dominant dissipation mechanisms that set the Q of the resonator. Based upon these insights on dissipation, Q-enhancement strategies can then be designed to target and suppress the identified dominant losses. This paper provides a comprehensive review of the substantial progress that has been made during the last two decades for dissipation analysis methods and Q-enhancement strategies of piezoelectric MEMS laterally vibrating resonators.

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Section: Introductionmentioning

confidence: 99%

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Lee

Zhang

2020

Sensors

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Active Enhancement in the k_t ²·Q of Two-Port AlN Resonators for Low-Loss Filtering

Kochhar

Piazza

2019

2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC)

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A Modulation-Defined RF Micro-Acoustic Delay Line based on ScAlN MEMS Resonators for Self-Interference Cancellation

Michetti

Garikapati

Assylbekova

et al. 2023

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

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Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators

Cited by 9 publications

References 8 publications

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Active Enhancement in the k_t ²·Q of Two-Port AlN Resonators for Low-Loss Filtering

A Modulation-Defined RF Micro-Acoustic Delay Line based on ScAlN MEMS Resonators for Self-Interference Cancellation

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Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators

Cited by 9 publications

References 8 publications

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Dissipation Analysis Methods and Q-Enhancement Strategies in Piezoelectric MEMS Laterally Vibrating Resonators: A Review

Active Enhancement in the kt 2·Q of Two-Port AlN Resonators for Low-Loss Filtering

A Modulation-Defined RF Micro-Acoustic Delay Line based on ScAlN MEMS Resonators for Self-Interference Cancellation

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Active Enhancement in the k_t ²·Q of Two-Port AlN Resonators for Low-Loss Filtering