Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

Abstract

Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10 %17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure ) were experimentally determined for fabricated devices.

High reliability CoFeB/MgO/CoFeB magnetic tunnel junction fabrication using low-damage ion beam etching

“…The calculation of defect density has been reported in many previous researches. [27][28][29][30] In this work, we assume that some defects that cause dielectric breakdown exist in the pattern edge of the MTJ samples. Then the defect density can be calculated with the following equation…”