Experimental investigation of SEUs Induced by Heavy Ions in 28-nm FDSOI SRAMs

Xu, Jingyan; Guo, Yang; Song, Ruiqiang; Chi, Yaqing; Liang, Bin; Hu, Chunmei; Qu, Wanxia

doi:10.1109/radecs47380.2019.9745645

Cited by 2 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[2][3][4][5] Additionally, FDSOI display radiation tolerance 6,7) and robustness across a wide temperature range. 8,9) As a result, they have demonstrated advantages in many fields such as wearable devices, 10,11) aerospace, 12,13) image sensor 14,15) and quantum computing. 16,17) As the device scales down, the low-frequency noise of the device continues to increase, 18,19) and the noise characteristics becomes essential especially for those high-performance applications.…”

Section: Introductionmentioning

confidence: 99%

Simulation study of trap-induced noise characteristics in FDSOI MOSFETs

Xu,

Fan,

Sun

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The trap-induced noise characteristics of fully-depleted SOI (FDSOI) MOSFETs with Ultra-Thin Body and Buried Oxide (UTBB) are essential for high-performance applications. However, accurate noise modeling and traps identification of the device remains challenging. In this work, we investigate the noise characteristics of FDSOI MOSFETs arising from traps in both the gate dielectric (GD) and the buried oxide (BOX). By using TCAD tool, we examine the noise generated by traps at various energy levels and spatial positions in GD and BOX under different biases. The simulation results reveal that traps in GD and BOX exhibit distinctly different behaviors as Vg increases, providing insights for identifying traps from noise measurement results.

show abstract