Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Architectures

Berthod, Charly; Sondergaard, Sissel Tind; Odden, Jan Ove

doi:10.1109/pvsc.2018.8547804

Cited by 3 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ponce‐Alcántara et al 46 reported a wafer resistivity dependence of TC V oc of Si solar cells, which can be justified by the relative variation of the diode saturation current density with temperature (indicating γ variation). More directly, Berthod et al 47 attributed the wafer resistivity dependence of passivated emitter and rear (PERC) cells' TC V oc to a sensible difference in the value of γ . Note that the solar cells reported in the two studies have the same wafer thickness (180–200 μm) as our standard thickness cells.…”

Section: Resultsmentioning

confidence: 99%

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Srinivasa

Bowden

et al. 2022

Progress in Photovoltaics

View full text Add to dashboard Cite

Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high-resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage.

show abstract

Section: Resultsmentioning

confidence: 99%

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Srinivasa

Bowden

et al. 2022

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…The different amounts of dopants may lead to band gap narrowing, affecting both and directly, as well as affecting the absorption of light in the material. Recent studies show, however, that the base resistivity is more important than the compensation for both the performance of the solar cell and its temperature coefficients [23], [24]. Quantum efficiencies (QE) measured at different temperatures show that the main difference is in the 800 to 1100 nm range indicating a bulk lifetime effect.…”

Section: Introductionmentioning

confidence: 99%

Simulated and measured temperature coefficients in compensated silicon wafers and solar cells

Haug

Berthod

Skomedal

et al. 2019

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS ® ), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell processing steps before being etched down and re-passivated to assess the bulk lifetime of the final cells. Temperature-dependent photoluminescence imaging was used to study the spatial distribution of the carrier lifetime and the temperature coefficient of the lifetime. We observe a beneficial effect of higher doping levels on the temperature coefficients of the short circuit current in PERCT type cells, with the most favorable temperature coefficients are found in the ingot doped to 0.5 Ω-cm. Increasingly beneficial temperature coefficients in is also observed with increasing height in each ingot, which might be attributed to a combination of small variations in the dopant concentrations and to a clear increase in the temperature coefficient of the carrier lifetime with increasing ingot height. The latter point is also in agreement with the changes in the so-called gamma parameter of the open circuit voltage throughout the ingot. To build a more fundamental understanding of the experimental results the temperature dependence of the solar cells was simulated using PC1Dmod6.2. We find that the experimental temperature coefficients of the final cells can be reproduced in device simulations within 8 % of and 14 % for the and , respectively. The compensation level itself is of minor importance for the cell performance. Instead, the simulations indicate that the observed behavior in the temperature coefficients of the solar cells is mostly explained by differences in the net doping and carrier lifetime of the wafers.

show abstract

Temperature Sensitivity of Multicrystalline Silicon Solar Cells

Berthod

Kristensen

Strandberg

et al. 2019

IEEE J. Photovoltaics

View full text Add to dashboard Cite

Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Architectures

Cited by 3 publications

References 16 publications

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Simulated and measured temperature coefficients in compensated silicon wafers and solar cells

Temperature Sensitivity of Multicrystalline Silicon Solar Cells

Contact Info

Product

Resources

About