Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

Costa, Erick Cardoso; Santos, Caroline Piesanti dos; Xavier, Fábio Antônio; Weingaertner, Walter Lindolfo

doi:10.1590/1980-5373-mr-2020-0013

Cited by 9 publications

(3 citation statements)

References 12 publications

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“…As seen in the Raman spectra, the microgrooves region presented a bandwidth associated with the a-Si phase, indicating a more intense compressive state on the sawn surface. This higher compressive stress can be attributed to the surface formation by ductile cutting mode, which leads to the formation of smooth grooves on the sawn silicon surface [7]. Based on this nding, it can be stated that the stress state of the sawn polycrystalline silicon surface results from material removal in ductile regime.…”

Section: Brittle-ductile Transition and Residual Stress Due To Phase ...mentioning

confidence: 89%

“…This approach is associated with a higher material removal rate, lower cost per wafer and better surface quality, besides being environmentally friendly [5,6]. However, crystalline silicon has the typical characteristics of a brittle material and thus damage to surface integrity of the wafer, such as surface roughness, fractures, scratches, micro-cracks, residual stress and so on, is one of the most serious issues arising during the processing [7]. The silicon wafers must comply with stringent requirements of surface integrity to ensure the performance and lifetime of a solar cell.…”

Section: Introductionmentioning

confidence: 99%

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Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

Costa

Santos

Carvalho

et al. 2022

Int J Adv Manuf Technol

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This study aimed to evaluate and better understand the mechanical and crystalline responses of polycrystalline silicon sawn by diamond wire sawing. To simplify the multi-wire sawing kinematic, an endless wire saw with a single looped diamond wire was used. The wire cutting speed and feed rate of the sawing process were varied in order to evaluate the characteristics of sawn surface morphology, surface roughness and subsurface damage. The analysis of brittle-ductile transition and residual stress of the sawn surface and silicon chips were performed with Raman spectroscopy. The wear and failure mechanism of the diamond wire were analyzed. The results show that sawn surface is composed of brittle and ductile regions and the predominance of one of these directly affected the surface roughness R a . The ductile cutting mode induced the predominance of microgrooves and ploughing over the sawn surface and led to formation of an amorphous layer with residual compressive stress of up to -192.3 MPa. Micro-cracks in subsurface were identi ed and it reached a minimum depth of 7.2±1.6 µm.Chip fragments and elongated chips were observed and Raman spectra showed that the latter are amorphous. The wire wear analysis indicated that during the cutting there is deformation of the Ni-layer, exposed grits and grit pullout. The main wear mechanisms are Ni-matrix removal and abrasive wear of the diamond grit. A better surface quality of polycrystalline silicon was obtained on increasing wire cutting speed and decreasing feed rate. The results found in this study can help to reach a high quality surface of silicon wafer for photovoltaic application. HighlightsAnisotropy of poly-Si induces to sawn surface composed of brittle and ductile regions and it affected the surface roughness Ductile cutting leads to surface formation with amorphous phases and residual compressive stress On increasing wire cutting speed and decreasing feed rate was obtained a minimum micro-crack depth Chip fragments and elongated chips were observed and Raman spectra showed that the latter are amorphous Wear mechanisms of the diamond wire were Ni-matrix deformation and removal, abrasive wear and grits pullout

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Section: Brittle-ductile Transition and Residual Stress Due To Phase ...mentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

Costa

Santos

Carvalho

et al. 2022

Int J Adv Manuf Technol

Self Cite

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“…The results showed that fast-growing wafer crystal had a large maximum residual shear stress. Erick et al [15] studied the influence of different slicing parameters on monocrystalline silicon wafers, and measured the residual stress of the silicon wafers after cutting by Raman spectroscopy. The results showed that the residual stress on the surface of the monocrystalline silicon wafer by wire saw slicing is compressive stress, and the residual compressive stress increases with the increase of the axial speed of the wire saw.…”

Section: Introductionmentioning

confidence: 99%

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

Wang

Zhao²,

Li³

et al. 2022

Int J Adv Manuf Technol

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Monocrystalline silicon wafer is the most important raw material in chip manufacturing, wire sawing is the most common processing method of monocrystalline silicon wafer. The residual stress generated by cutting affects the subsequent polishing costs directly, as well as the fracture strength and mechanical integrity of the monocrystalline silicon wafer, thus affecting the service performance. In this paper, the generation mechanism of residual stress was analyzed based on diamond wire sawing technology. Then, based on D-P plastic constitutive model, the magnitude and distribution of residual stress of monocrystalline silicon chip under different process parameters were simulated by ABAQUS simulation software. Finally, the experiment of ultrasonic vibration assisted diamond wire sawing monocrystalline silicon and blind hole drilling method detection were conducted, the strain values before and after drilling in three directions were measured by strain gauge rosette, and the residual stress was calculated by combining with mathematical theory, and the experimental results verified the validity of the finite element model. The experimental results showed that residual compressive stress remains on the surface of silicon wafer in both conventional wire sawing and ultrasonic vibration assisted wire sawing. The residual compressive stress increases with the increase of the axial speed of wire saw, decreases with the increase of the wire saw feed speed, and fluctuates with the increase of the workpiece rotation speed. The residual compressive stress on the surface of the silicon wafer by ultrasonic vibration assisted wire sawing is larger than that by conventional wire sawing. The variation trend of simulation and experiment results is consistent, which provides theoretical support for the subsequent processing of monocrystalline silicon wafers.

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A novel subsurface damage model in diamond wire sawing of silicon wafers

Xiao,

Yin,

Cheung

et al. 2024

Engineering Fracture Mechanics

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Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

Cited by 9 publications

References 12 publications

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

The surface residual stress of monocrystalline silicon in ultrasonic vibration–assisted diamond wire sawing

A novel subsurface damage model in diamond wire sawing of silicon wafers

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