Experimental investigation on the instability for NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction-gate FETs under negative bias stress

Jiang, Zhuolin; Li, Xiangnan; Zhou, Xuanze; Wei, Yuxi; Wang, Jie; Xu, Guangwei; Long, Shibing; Luo, Xiaorong

doi:10.1088/1674-4926/44/7/072803

Cited by 6 publications

(4 citation statements)

References 17 publications

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“…To study the electrical instability of the device passivated with HfO 2 , we measured the transfer characteristics under NBS at room temperature, setting the stress time from 0 s to 3600 s. We only interrupted the applied stress for the measurement by quick sweeping V GS from −10 to 0 V. Figure 5(a) shows the shift of the I DS -V GS for V DS = 1 V when a constant bias stress voltage was applied at V GS = −10 V. A performance degradation of g m , SS, and D it was observed, as shown in figures 5(b) and (c), which was attributed to increased electron trapping and de-trapping between gate interface and the channel due to negative gate bias stress [25]. Figure 5(d) shows the change in the extracted ∆V TH as a function of stress time for the HfO 2 −, Al 2 O 3 -passivated, and unpassivated devices, which were cited from our previous result [17,26].…”

Section: Resultsmentioning

confidence: 93%

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Oh,

Lee,

et al. 2024

Semicond. Sci. Technol.

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We report the effect of HfO2 passivation on the electrical characteristics of (100) β-Ga2O3 MOSFETs. The atomic-layer-deposited HfO2 layer with negative defect charges enhances the transconductance and subthreshold slope. A significant positive threshold voltage (VTH) shift of ~32 V is induced after the passivation. Moreover, significantly less VTH shift of ~2 V is observed under negative bias stress for 3,600 sec in comparison with an Al2O3 passivated and unpassivated device. Physics-based TCAD simulation is performed to demonstrate the surface depletion effect and the dependency on the density of negative fixed charges in the HfO2 passivation layer. The results reveal that ALD-HfO2 passivation can not only modulate the electrical performance but breakdown characteristics by suppressing peak electric-field.

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Section: Resultsmentioning

confidence: 93%

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Oh,

Lee,

et al. 2024

Semicond. Sci. Technol.

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“…Monitoring V th shifts and R on under positive bias stress (PBS) and negative bias stress (NBS) can help to identify traps contributing to the FET instability and degradation. This has been studied in recessed-gate [252], p-NiO-gate [253], and β-Ga 2 O 3 /SiC FETs [254]. PBS-induced instability is primarily caused by border traps in the gate oxide, while NBSinduced instability is attributed to both interface states and border traps [252].…”

Section: Characterizationmentioning

confidence: 99%

“…PBS-induced instability is primarily caused by border traps in the gate oxide, while NBSinduced instability is attributed to both interface states and border traps [252]. In p-NiO gated FETs, a high V GS or long stress time permanently negatively shifted the V th by ionizing interface dipoles, which neutralized ionized charges in the depletion region [253].…”

Section: Characterizationmentioning

confidence: 99%

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Maimon,

2023

Materials

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Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm−1, and Baliga figure of merit of 3300, 3–10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1−x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

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“…According to the conventional single-level SRH model for WBG materials, the rate of nonradiative carrier recombination in these materials should be small. Nevertheless, this is clearly inconsistent with the experimental observations, as many oxides and nitrides exhibit a significant carrier-mediated nonradiative recombination rate. − Therefore, the conventional single-level SRH model faces a conundrum when it comes to comprehending the substantial nonradiative recombination rates observed in WBG materials. It is imperative to elucidate new nonradiative recombination mechanisms in these materials.…”

Section: Introductionmentioning

confidence: 99%

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO₂

Qiu,

Song,

Deng

et al. 2023

J. Am. Chem. Soc.

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The conventional single-defect-mediated Shockley−Read−Hall model suggests that the nonradiative carrier recombination rate in wide-band gap (WBG) semiconductors would be negligible because the single-defect level is expected to be either far from valence-band-maximum (VBM) or conduction-band-minimum (CBM), or both. However, this model falls short of elucidating the substantial nonradiative recombination phenomena often observed experimentally across various WBG semiconductors. Owing to more localized nature of defect states inherent to WBG semiconductors, when the defect charge state changes, there is a pronounced structural relaxation around the local defect site. This suggests that a defect at each charge state may exhibit a few distinct local configurations, namely, a stable configuration and a few metastable/transit state configurations. Consequently, a dual-level nonradiative recombination model should more realistically exist in WBG semiconductors. In this model, through the dual-level mechanism, electron and hole trap levels are different from each other and could be closer to the CBM for the electron trap and closer to the VBM for the hole trap, respectively; therefore, this significantly increases the corresponding electron and hole capture rates, enhancing the overall process of nonradiative recombination, and explains the experimental observations. In this work, taking technically important SiO 2 as an illustrative example, we introduce the dual-level mechanism to elucidate the mechanism of nonradiative carrier recombination in WBG semiconductors. Our findings demonstrated strong alignment with available experimental data, reinforcing the robustness of our proposed dual-level model. Our fundamental understanding, therefore, provides a clear physical picture of the issue and can also be applied to predict the defect-related nonradiative carrier recombination characteristics in other WBG materials.

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Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

Cited by 6 publications

References 17 publications

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO₂

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Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Cited by 6 publications

References 17 publications

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga2O3 MOSFET

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga2O3 MOSFET

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2

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Product

Resources

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Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET

Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO₂