1980
DOI: 10.1016/0022-3115(80)90177-4
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Experimental measurements of hydrogen isotope exchange in carbon surfaces under ion bombardment

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Cited by 14 publications
(3 citation statements)
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“…Measurements have been reported around three decades ago for the isotopic replacement of deuterium implanted in several low-Z refractory materials (C, Si, B 4 C, TiC, VB 2 , TiB 2 , and B) at room temperature [5,6,7,8,9] and elevated temperatures [10], as well as in 316 stainless steel at 153 K [11], during subsequent irradiation with protium ions. The observed isotope exchange behavior is in a good agreement with the local mixing model [5] based on the depth dependence of the implanted ions and the experimentally determined hydrogen saturation concentrations.…”
Section: Introductionmentioning
confidence: 99%
“…Measurements have been reported around three decades ago for the isotopic replacement of deuterium implanted in several low-Z refractory materials (C, Si, B 4 C, TiC, VB 2 , TiB 2 , and B) at room temperature [5,6,7,8,9] and elevated temperatures [10], as well as in 316 stainless steel at 153 K [11], during subsequent irradiation with protium ions. The observed isotope exchange behavior is in a good agreement with the local mixing model [5] based on the depth dependence of the implanted ions and the experimentally determined hydrogen saturation concentrations.…”
Section: Introductionmentioning
confidence: 99%
“…Underwood, et. al (13) have also observed a decrease in the D replacement rate for non-overlapping profiles by measuring the release of D2 and HD gas from D saturated carbon during H implantation.…”
Section: Methodsmentioning
confidence: 99%
“…Первые эксперименты по изотопному обмену водорода в процессе последовательного облучения ионами дейтерия и протия были проведены в жаростойких материалах с невысоким атомным номером (C, Si, B 4 C, TiC, VB 2 , TiB 2 и B) при комнатной температуре [5][6][7][8][9] и повышенной температуре [10], а также в стали AISI 316 при 153 K [11]. Наблюдаемый в этих экспериментах изотопный обмен хорошо опи-сывается моделью локального смешивания [5], учитывающей глубину внедрения изотопов водорода и концентрацию насыщения изотопами водорода.…”
Section: Introductionunclassified