Experimental Methods

Klingshirn, C.

doi:10.1007/978-3-642-28362-8_25

Cited by 3 publications

(2 citation statements)

References 244 publications

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“…1 shows the PLE integrated emission intensity for a detection energy window between 1.05 and 1.09 eV. Knowing that such PLE data do not simply reflect the absorption spectrum but include also the relaxation processes to the detection energy, we measured these PLE spectra over various detection energy windows (not shown here): the spectra are similar whatever the detection energy with an uncertainty of ±3 meV, showing that the PLE spectra can be, in this instance, considered to be essentially proportional to the absorption coefficient 28 , itself proportional to the density of states.…”

Section: Photoluminescence Excitationmentioning

confidence: 97%

Optical Signatures of Impurity–Impurity Interactions in Copper Containing II–VI Alloy Semiconductors

Bhattacharyya

Gahlot

Viswanatha

et al. 2018

J. Phys. Chem. Lett.

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We study the optical properties of copper containing II-VI alloy quantum dots (CuZnCdSe). Copper mole fractions within the host are varied from 0.001 to 0.35. No impurity phases are observed over this composition range, and the formation of secondary phases of copper selenide are observed only at x > 0.45. The optical absorption and emission spectra of these materials are observed to be a strong function of x, and provide information regarding composition induced impurity-impurity interactions. In particular, the integrated cross section of optical absorption per copper atom changes sharply (from 1 × 10 nm to 4 × 10 nm) at x = 0.12, suggesting a composition induced change in local electronic structure. These materials may serve as model systems to understand the electronic structure of I-III-VI semiconductor compounds.

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Section: Photoluminescence Excitationmentioning

confidence: 97%

Optical Signatures of Impurity–Impurity Interactions in Copper Containing II–VI Alloy Semiconductors

Bhattacharyya

Gahlot

Viswanatha

et al. 2018

J. Phys. Chem. Lett.

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show abstract

“…Fig.1 shows the PLE integrated emission intensity for a detection energy window between 1.05 and 1.09 eV. Knowing that such PLE data do not simply reflect the absorption spectrum but include also the relaxation processes to the detection energy, we measured these PLE spectra over various detection energy windows (not shown here): the spectra are similar whatever the detection energy with an uncertainty of ±3 meV, showing that the PLE spectra can be, in this instance, considered to be essentially proportional to the absorption coefficient 28 , itself proportional to the density of states.…”

Section: Photoluminescence Excitationmentioning

confidence: 97%

Optical determination of the band gap and band tail of epitaxial Ag2ZnSnSe4 at low temperature

et al. 2020

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We report on the precise determination of both the band gap E g and the characteristic energy U of the band tail of localized defect states, for monocrystalline Ag 2 ZnSnSe 4. Both photoluminescence excitation and timeresolved photoluminescence studies lead to E g = 1223 ± 3 meV, and U = 20 ± 3 meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, namely by measuring the energy shift between the photoluminescence emission and the excitation one-the so-called Stokes shift. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy.

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Widely Tunable Single/Dual RF Signal Generation by a Monolithic Three-Section DFB Laser

et al. 2020

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A three-section distributed feedback laser with a 2.5 InP/air pair of distributed Bragg reflectors (DBRs) was fabricated and analyzed in terms of its microwave generation capability. A widely tunable single radio frequency (RF) signal can be detected using optical heterodyning, and the tuning range is from 2 to 45 GHz. The incorporation of the third section provides an opportunity to present the dual RF operation when three emission peaks are near to each other in the wavelength domain. The proposed design provides a 21.3% enhancement in the RF tuning range compared with the range of a two-section laser (35.29 GHz versus 42.81 GHz). The compactness of the proposed device can be useful for future radio-over-fiber applications.

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Experimental Methods

Cited by 3 publications

References 244 publications

Optical Signatures of Impurity–Impurity Interactions in Copper Containing II–VI Alloy Semiconductors

Optical Signatures of Impurity–Impurity Interactions in Copper Containing II–VI Alloy Semiconductors

Optical determination of the band gap and band tail of epitaxial Ag2ZnSnSe4 at low temperature

Widely Tunable Single/Dual RF Signal Generation by a Monolithic Three-Section DFB Laser

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