Experimental microwave study of metal-to-metal point-contact diodes

Pyee, M.; Uebersfeld, J.; Auvray, J.; Gastaud, C.

doi:10.1109/proc.1974.9462

Cited by 5 publications

(9 citation statements)

References 9 publications

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“…Current-voltage characteristics (CVC) of industrial diodes (GA401, GA402, DK-s7M, KD514A, D18, tunnel GI401) are typical for all such diodes. CVC of MIM diodes correspond to those described in the literature [14]- [19] [21] [22] [23].…”

Section: Resultssupporting

confidence: 75%

“…It was found that the diodes can be divided into two groups according to the form of I sc (P) (curves 1 in Figure 6(a) and Figure 6(b), which are similar to that of MIM-diodes in ref. [19]).…”

Section: Resultsmentioning

confidence: 99%

“…Same approach cannot be considered physical, since the current-voltage characteristic is a secondary property in relation to the electronic processes taking place in inhomogeneous diode structure exposed to high-frequency electromagnetic waves. Therefore, it is impossible to explain some of the experimental facts observed in various diodes at high-frequency, such as 1) a polarity reversal of the detected voltage in MIM diodes for optical [15] [16] [17] or microwave signal of high intensity [18] [19]; 2) detection of X-band signals by diodes having a cutoff frequency of 10 4 -10 8 Hz [20]; 3) the effect of the orientation of the polarization of optical radiation on the detected voltage in planar MIM-diodes [16].…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

Reymbaeva¹,

Abdurakhmanov²,

Orel³

2023

WJCMP

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Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal-MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.

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Section: Resultssupporting

confidence: 75%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

Reymbaeva¹,

Abdurakhmanov²,

Orel³

2023

WJCMP

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“…Les diodes. -La mesure de fréquences laser ne serait pas possible sans le dispositif non linéaire capable de produire des harmoniques et d'effectuer le mélange de plusieurs radiations optiques [4,32,33]. Ce dispositif doit posséder une bande passante de plusieurs GHz, ce qui exclut les détecteurs thermiques ou photoniques, dont la bande passante est en général inférieure à 100 MHz.…”

Section: Synthèse Des Fréquences Optiques Par Bat-unclassified

Synthèse et mesure des fréquences optiques

Jiménez¹

1979

Rev. Phys. Appl. (Paris)

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2014 Les lasers à gaz stabilisés en fréquence par absorption saturée sont actuellement acceptés comme étalons secondaires de fréquence et de longueur dans le domaine optique. Les caractéristiques de stabilité et reproductibilité en fréquence de ces différents lasers sont passées en revue. La synthèse de fréquences, par mélange dans un dispositif non linéaire à large bande passante de plusieurs faisceaux lasers, permet la mesure de fréquences comprises entre les micro-ondes et l'infrarouge proche. La synthèse à partir de deux lasers à gaz carbonique nous a permis de mesurer la fréquence du laser He-Ne à 88 THz (3,39 03BCm). La plage de mesure peut être élargie en utilisant les différents isotopes du CO2. Plusieurs types de dispositifs non linéaires sont capables de réaliser le mélange des fréquences optiques. Une étude de leurs caractéristiques comme détecteur et mélangeur montre les domaines respectifs possibles de fonctionnement. Plusieurs d'entre eux sont susceptibles de travailler à des fréquences infrarouges, et la possibilité d'étendre leur fonctionnement jusqu'au visible est signalée. L'utilisation de nouveaux dispositifs, tels que l'oscillateur à cavité supraconductrice et le laser à alcool méthylique (qui possèdent des raies d'émission très étroites), dans un nouveau schéma de raccordement entre les fréquences radioélectriques et optiques, permet d'envisager la mesure de la fréquence du laser à méthane à 3,39 03BCm avec une précision de l'ordre de 10-12. Abstract. 2014 Saturated-absorption stabilized gas lasers provide, in the optical region, accepted secondary frequency and length standards. Frequency stability and reproducibility of these lasers are reviewed. Using a broadband nonlinear device as a mixer, frequency synthesis of different lasers extend the frequency measurement range from microwaves to the near infrared. Using two carbon dioxide lasers, we have been able to measure the He-Ne laser frequency at 88 THz (3.39 03BCm). The frequency measurement range may be increased using different CO2 isotopes. Several nonlinear devices are able to mix optical frequencies from the submillimetric to the infrared wavelength. We review their characteristics as detectors and mixers, and we point out the possibility to extend it to the visible range. The use of new devices, the cavity stabilized superconducting oscillator and the methyl alcohol laser, with very narrow linewidths, inserted in a new laser frequency synthesis chain, should permit measurements of the methane laser frequency at 3.39 03BCm to parts in 1012.

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“…Интересные особенности детектирования (смена знака детектированного напряжения при росте V 0 , влияние ориентации плоскости поляризации относительно плоскости диода) наблюдались в диодах металл−изолятор−металл (МИМ) [9][10][11]. Однако нам неизвестны подобные исследования на диодах с p−n-переходом.…”

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