Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy

Kobayashi, Masaki; Song, G. S.; Kataoka, Tomomi; Sakamoto, Yuta; Fujimori, A.; Ohkochi, Takuo; Takeda, Yukiharu; Okane, Tetsuo; Saitoh, Y.; Yamagami, Hiroshi; Yamahara, Hiroyasu; Saeki, Hiromasa; Kawai, Tomoji; Tabata, Hitoshi

doi:10.1063/1.3116223

Cited by 14 publications

(15 citation statements)

References 16 publications

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“…However, Fig. 1 also illustrates that experimental band structures [82,84] are not yet accurate enough to determine band parameters such as effective masses or crystal-field splittings without first-principles calculations.…”

Section: Quasiparticle Band Structures and Band Parametersmentioning

confidence: 99%

“…For additional technical details and convergence parameters we refer to previous work [45,57]. Figure 1 shows angle-resolved photoemission spectroscopy (ARPES) data for the upper valence bands of ZnO [82,83]. Figure 1.…”

Section: Quasiparticle Band Structures and Band Parametersmentioning

confidence: 99%

“…Figure 1. (color online) ARPES data for the upper valence bands of ZnO [82,83] with the G 0 W 0 @OEPx(cLDA) band structure superimposed (red lines)…”

Section: Quasiparticle Band Structures and Band Parametersmentioning

confidence: 99%

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Band parameters and strain effects in ZnO and group-III nitrides

Yan

Rinke

Winkelnkemper

et al. 2010

Semicond. Sci. Technol.

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Abstract. We present consistent sets of band parameters (including band gaps, crystal-field splittings, effective masses, Luttinger, and E P parameters) for AlN, GaN, InN, and ZnO in the wurtzite phase.For band-energy differences we observe a pronounced nonlinear dependence on strain. Consistent and complete sets of deformation potentials are then derived for realistic strain conditions in the linear regime around the experimental equilibrium volume. To overcome the limitations of density-functional theory (DFT) in the local-density or generalizedgradient approximations (LDA and GGA) we employ the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional as well as exact exchange (OEPx) based quasi-particle energy calculations in the G 0 W 0 approach.

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Section: Quasiparticle Band Structures and Band Parametersmentioning

confidence: 99%

Section: Quasiparticle Band Structures and Band Parametersmentioning

confidence: 99%

See 1 more Smart Citation

Band parameters and strain effects in ZnO and group-III nitrides

Yan

Rinke

Winkelnkemper

et al. 2010

Semicond. Sci. Technol.

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“…27 As no such structure is seen, we conclude that either interface states are not induced by the amorphous layer or contributions from the interface/surface states to ARPES images is vanishingly small at high energy. 30,31 Based on the experimental findings, we now discuss the perspectives of SX-ARPES applications to various heterostructures. Figure 3 shows schematic diagrams of three such systems: (1) A thin film covered by an amorphous layer [ Fig.…”

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confidence: 99%

Digging up bulk band dispersion buried under a passivation layer

Kobayashi

Muneta

Schmitt

et al. 2012

Applied Physics Letters

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Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials with their atomically-flat interfaces in the heterostructures exhibiting novel physical properties. From a fundamental point of view, knowledge of the electronic structures of thin films and their interfaces is indispensable to understand the origins of their functionality which further evolves into realistic device application. In view of extreme surface sensitivity of the conventional vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES), with a probing depth of several angstroms, experiments on thin films have to use sophisticated in-situ sample transfer systems to avoid surface contamination. In this Letter, we put forward a method to circumvent these difficulties using soft X-ray (SX) ARPES. A GaAs:Be thin film in our samples was protected by an amorphous As layer with an thickness of $\sim 1$ nm exceeding the probing depth of the VUV photoemission with photon energy $h\nu$ around 100 eV. The increase of the probing depth with increasing $h\nu$ towards the SX region has clearly exposed the bulk band dispersion without any surface treatment. Any contributions from potential interface states between the thin film and the amorphous capping layer has been below the detection limit. Our results demonstrate that SX-ARPES enables the observation of coherent three-dimensional band dispersion of buried heterostructure layers through an amorphous capping layer, breaking through the necessity of surface cleaning of thin film samples. Thereby, this opens new frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.Comment: 5 pages, 3 figure

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“…Zwicker and Jacobi measured a valence band width of 5.3 eV using sychrotron radiation with angle resolved UV photoelectron spectroscopy. 17 Recently, the electronic structure of ZnO has been investigated using soft x-ray angle-resolved photoemission spectroscopy by Kobayashi et al 18 who, apparently unaware of the work of Zwicker, independently obtained the same value of the valence band width. The symmetry of the three topmost valence bands has been extensively debated, and the Γ 7 , Γ 9 , Γ 7 ordering has been recently confirmed by high-resolution magneto-optical measurements of bound excitons.…”

Section: Numerical Modelmentioning

confidence: 98%

Theory of high field carrier transport and impact ionization in ZnO

Bertazzi

Penna

Goano

et al. 2010

Oxide-Based Materials and Devices

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We present a full band Monte Carlo study of high field carrier transport and impact ionization properties of wurtzite ZnO. The proposed model is based on an accurate electronic structure calculated with a nonlocal empirical pseudopotential method and a phonon dispersion determined with density functional theory. The model includes the full details of the lowest eight conduction bands and the top six valence bands derived from the empirical pseudopotential method and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The carrierphonon interaction is treated using the rigid pseudoion formalism, thus removing adjustable parameters such as deformation potential coefficients. Electric-field-induced interband transitions are included in the model by the direct solution of the time-dependent multiband Schrödinger equation. The hole ionization coefficient is found to be very low compared to the electron ionization coefficient. The low ratio of hole and electron ionization coefficients k = β /α holds the promise for high speed and low noise avalanche photodetection in the ultraviolet spectral range.

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Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy

Cited by 14 publications

References 16 publications

Band parameters and strain effects in ZnO and group-III nitrides

Band parameters and strain effects in ZnO and group-III nitrides

Digging up bulk band dispersion buried under a passivation layer

Theory of high field carrier transport and impact ionization in ZnO

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