Experimental observation of multiple current-voltage curves and zero-bias memory phenomena in quantum well diodes with n−-n+-n− spacer layers

Abstract

We report the observation of a new room-temperature storage phenomenon based on quantum interference. Multiple, stable current-voltage curves extending continuously through zero bias have been observed in GaAs/AlAs double barrier quantum well diodes containing n−-n+-n− spacer layers. Once placed on a particular branch, the devices retain memory of the branch they lie on, even when held at zero bias for extended periods of time. The devices can be repetitively switched between the different branches of the current-voltage characteristics. The experimental observations are consistent with the multiple self-consistent solutions to the coupled Schrödinger and Poisson equations found for diodes that combine heterostructure tunneling barriers with n−-n+-n− spacer layers.

Electrically programmable resistor on semi-insulating GaAs

“…Other non-volatile memory phenomena in intentionally fabricated small (diameter ∼0.1 µm) resonant tunnelling diodes have also been reported and may be related to our observations and explanations [2,3].…”

Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices

“…It should be noticed that in some systems with specific doping profile quantum properties of electron transport lead to a stronger effect, namely to bistability of CVC even at zero bias [4].…”