2009
DOI: 10.1016/j.ultramic.2009.05.005
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Experimental observation of the improvement in MTF from backthinning a CMOS direct electron detector

Abstract: The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or DQE). It was suggested that a ‘thin’ CMOS detector would have the most outstanding properties [1–3] because of a reduction in the proportion of backscatter… Show more

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Cited by 102 publications
(56 citation statements)
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“…In addition, these CMOS detectors can be made to be very thin (by backthinning after wafer fabrication), and this reduces the amount of energy deposited in the incorrect pixel of the detector by electrons backscattered from the substrate material, which also adds noise to the image. The modulation transfer function and DQE of a direct electron detector can be improved by a factor of two or more by backthinning (McMullan et al 2009c). The reduction of backscattering also results in a 2-to 3-fold improvement in detector lifetime due to reduced overall energy deposition.…”
Section: Direct Electron Cmos Detectorsmentioning
confidence: 99%
“…In addition, these CMOS detectors can be made to be very thin (by backthinning after wafer fabrication), and this reduces the amount of energy deposited in the incorrect pixel of the detector by electrons backscattered from the substrate material, which also adds noise to the image. The modulation transfer function and DQE of a direct electron detector can be improved by a factor of two or more by backthinning (McMullan et al 2009c). The reduction of backscattering also results in a 2-to 3-fold improvement in detector lifetime due to reduced overall energy deposition.…”
Section: Direct Electron Cmos Detectorsmentioning
confidence: 99%
“…Direct electron detection can be achieved by using solid state detection technology such as the Monolithic Active Pixel Sensor (MAPS) [1] or a hybrid technology such as the Medipix3 detector [2,3]. The MAPS detectors are well suited for high electron energy regime within the context of imaging performance, although at a substantial reduction in detection efficiency, as a high fraction of the electron beam is transmitted without being detected.…”
Section: Introductionmentioning
confidence: 99%
“…The MAPS detectors are well suited for high electron energy regime within the context of imaging performance, although at a substantial reduction in detection efficiency, as a high fraction of the electron beam is transmitted without being detected. Furthermore, at lower electron energies, the imaging performance using MAPS will be reduced due to increased electron backscattering [1]. Beam energies lower than 100 keV can provide greater contrast for thin biological samples [4] or the elimination of knock-on damage by the primary beam, for example in imaging 2-dimensional materials containing light elements such as graphene [5].…”
Section: Introductionmentioning
confidence: 99%
“…Direct electron-detection devices, based on complementary metal-oxide-semiconductor transistors, have considerably improved the SNR relative to films or charge coupled devices [17]. The latter had to first convert the electronic signal to an optical signal, and then covert the optical signal back to an electronic signal.…”
Section: Resolution Improvementsmentioning
confidence: 99%