1986
DOI: 10.1002/pssa.2210930171
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Experimental Richardson Constant of Metal-Semiconductor Schottky Barrier Contacts

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Cited by 11 publications
(4 citation statements)
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“…The low extracted value is a combination of two factors: the extraction is inaccurate due to the long extrapolation to T = from the data in figure 5.7, and the Richardson"s constant depends strongly on surface preparation, contact thickness, and contact metal [34]. The difference in parameters for different size devices, the extracted ideality factor, and the diode differential resistance suggest possible models to describe these devices.…”
Section: Extraction Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The low extracted value is a combination of two factors: the extraction is inaccurate due to the long extrapolation to T = from the data in figure 5.7, and the Richardson"s constant depends strongly on surface preparation, contact thickness, and contact metal [34]. The difference in parameters for different size devices, the extracted ideality factor, and the diode differential resistance suggest possible models to describe these devices.…”
Section: Extraction Resultsmentioning
confidence: 99%
“…for p-CdTe [20]. However, the Richardson"s constant depends on surface preparation, metal deposition technique, contact thickness, and contact metal [34], [35]. Therefore, the Richardson"s constant obtained from the literature may not be correct for our device, and the barrier height calculated from this technique is only as accurate as our knowledge of this parameter [36].…”
Section: Current Versus Voltage Extraction Methodsmentioning
confidence: 96%
“…Richardson"s constant is much less than the A * 48 A/cm 2 K 2 predicted by theory: (5.13) where m * is the carrier effective mass and h is Planck"s constant. The low extracted value is a combination of two factors: the extraction is inaccurate due to the long extrapolation to T = from the data in figure 5.7, and the Richardson"s constant depends strongly on surface preparation, contact thickness, and contact metal [34]. The difference in parameters for different size devices, the extracted ideality factor, and the diode differential resistance suggest possible models to describe these devices.…”
Section: Extraction Resultsmentioning
confidence: 99%
“…for p-CdTe [20]. However, the Richardson"s constant depends on surface preparation, metal deposition technique, contact thickness, and contact metal [34], [35]. Therefore, the…”
Section: Thermionic Emissionmentioning
confidence: 99%