Experimental studies of the adsorption of oxygen and nitric oxide at Ni(100)

Volkmer, M.; Nolting, K.; Fecher, G. H.; Dierks, B.; Heinzmann, Ulrich

doi:10.1016/0042-207x(90)90288-a

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…From previous investigations for adsorption of NO on a metal surface [46], it turned out that the work function increases compared to the bare metal surface. This is assigned to the dipole moment of NO (N being positively charged and O negatively) and the fact that NO binds with its N atom adsorbed on the metal surface.…”

Section: Electrostatic and Xps Analysis Of Materials Surfacesmentioning

confidence: 99%

Comparison of Casimir forces and electrostatics from conductive SiC-Si/C and Ru surfaces

et al. 2019

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Comprehensive knowledge of Casimir forces and associated electrostatics from conductive SiC and Ru surfaces can be essential in diverse areas ranging from micro/nanodevice operation in harsh environments to multilayer coatings in advanced lithography technologies. Hence, the Casimir force was measured between an Au-coated microsphere and N-doped SiC samples with Si-and Cterminated faces, and the results were compared with the measurements using the same microsphere and a metallic Ruthenium surface. Electrostatic calibration showed that the Si-and Cfaces behave differently with a nearly ~0.6-0.7 V difference in the contact potentials V0 Si/C . We attribute this to a higher incorporation of N on the C-terminated face in the near surface region resulting in the formation of NOx and an increased work function compared to the Si-terminated surface which is in agreement with x-ray photoelectron spectroscopy data. Notably, the contact potential of the SiC-C face (V 0 C~ 0.1 V) was closer to the metallic Ru-Au system (V 0 Ru~0 .05 V).2 However, the measured optical properties of the SiC-Si/C terminated surfaces with ellipsometry did not show any substantial differences indicating that the effective depth of the Si/C terminating surface layers are significantly smaller than the photon penetration depth not leading to any differences in the calculated forces via Lifshitz theory. Nonetheless, the measured Casimir forces, after compensation of the electrostatics contributions, showed differences between the Si/C faces, whereas the comparison with the Lifshitz theory prediction shows better agreement for the SiC-Si face. Finally, comparison of the Casimir forces below 40 nm separations between the SiC-Si/C and Ru surfaces indicated that the short-range roughness effects on the Casimir force increase in magnitude with increasing metallic behavior of the plate surface. Therefore, not only the material optical properties but also the conductive state and roughness of the surface layers must be carefully taken into account in short range Casimir interactions between more complex dielectric materials. 3 I. Introduction Nowadays, the Casimir force that originates from the perturbation of electromagnetic vacuum fluctuations is still a topic of relentless research [1-21], though its proposition in 1948 by the Dutch physicist Hendrik Casimir almost dates back 70 years [1]. The interest stems from a multitude of research fields ranging from fundamental physics in search of new forces beyond the standard model to micro/nanodevices for technology applications [2-6]. Lifshitz and co-workers in the 1950s [7,8] considered the general case of flat dielectric plates by exploiting the fluctuationdissipation theorem, which relates the dissipative properties of the plates (due to optical absorption by many microscopic dipoles) and the resulting electromagnetic (EM) fluctuations. The theory describes the attractive interaction due to quantum fluctuations for all separations covering both the Casimir (long-range) and van der Waals (short-range) re...

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Section: Electrostatic and Xps Analysis Of Materials Surfacesmentioning

confidence: 99%