Experimental Studies on the Process Steps for Fabrication of IMPATT Diodes and Corresponding Study of the D C Breakdown Voltage

Mitra, Mandar; Ganguly, Anuva; Roy, S. K.; Banerjee, J. P.

doi:10.1080/02564602.1993.11437353

Cited by 5 publications

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Transit Time Devices

Roy

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Impatt Diodes Impatt Structures and Doping Profiles Basic Principle of Generation of Microwaves in Impatt Diodes Small‐Signal Analysis Based on Analytical Approximation Computer Studies of the DC and Small‐Signal Properties of Impatt Diodes of any Doping Profile Small‐Signal Computer Analysis of Impatt Diodes Large‐Signal Analysis of Impatt Diodes DC‐to‐Microwave Conversion Efficiency Effect of Mobile Space Charge Double Avalanche Region Diode and Cancellation of Space Charge Effect Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone High‐Frequency Considerations Noise in Impatt Diodes Thermal Limitations and Heat Sink Millimeter‐Wave Impatt Diodes Pulsed Millimeter‐Wave Impatt Diode Frequency Chirp in Pulsed Impatt Oscillators GaAs and InP Impatt Diodes Heterojunction Impatt Diodes Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region Trapatt Diode Baritt Diodes Acknowledgement

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Transit Time Devices

Roy

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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Computer Aided Realisation of Diffusion Based Si n+npp+ Double Drift Doping Profiles and Studies on Their Microwave Properties

Панда

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Satapathy

et al. 1996

Phys. Stat. Sol. (a)

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A computer method is developed to generate diffusion impurity profiles for a V-band silicon n+npp+ double drift region (DDR) with different values of diffusion length (s) and surface concentration ( N I L ) .The microwave properties of DDRs having different diffusion profiles have been computed by iterative computer simulation programs developed for dc and high frequency analyses of the IMPATT diode. The results indicate that the performance of the DDR optimises for particular values of surface concentration and diffusion length, which in turn provides the optimal impurity diffusion profile and the optimal diffusion fabrication parameters (diffusion time and temperature) for the Si double drift IMPATT.

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