2018
DOI: 10.7498/aps.67.20181225
|View full text |Cite
|
Sign up to set email alerts
|

Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton

Abstract: Ferroelectric random access memory (FRAM) is a promising memory for space application. The performance of FRAM under irradiation environment should be investigated, especially under proton irradiation environment, which dominates the particles in the space environment. The experiments on single event effects are carried out for two types of FRAMs (FM22L16 and FM28 V100) based on the proton cyclotron of China institute of atomic energy. Both dynamic and static mode are tested for each chip under the irradiation… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2019
2019
2022
2022

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 7 publications
0
0
0
Order By: Relevance