Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Li, Jingyi; Zhang, Wei; Zhou, Yu; Zhang, Xiaoyun; Jin, Guangyong

doi:10.1016/j.ijleo.2020.165904

Cited by 12 publications

(3 citation statements)

References 20 publications

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“…In figure 12(c), the plasma has mostly cooled by 30 μs, at which point it begins to be compressed under the effect of shock wave recoil pressure [33]. The time came to 40 μs because the plasma was completely cooled and the laser was no longer absorbed strongly (80-100 μs), and at the same time, as the shock wave recoiled, a clear channel of laser light micro-droplets in the droplet was observed.…”

Section: Flow Field Experiments At Focus Positionmentioning

confidence: 98%

Study on the effect of focal position change on the expansion velocity and propagation mechanism of plasma generated by millisecond pulsed laser-induced fused silica

Wang

Cai

2023

Plasma Sci. Technol.

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In this paper, by controlling the positional relationship between the target and the focal point, the surface damage, shock wave phenomenon and propagation mechanism involved in the plasma generation of fused silica by millisecond pulsed laser irradiation at different focal positions were studied. Laser energy is an important experimental variable. The dynamic process of plasma was detected by optical shadow method, and the influence of surface film damage on plasma propagation and the propagation mechanism at different focal positions were discussed. The study found that the plasma induced by the pulsed laser at the focus position within 0-20μs exploded, the micro-droplets formed around 20μs. At the same time, a shock wave is formed by the compressed air, the micro-droplets are compressed under the action of the shock wave recoil pressure, and the micro-droplets channel phenomenon is observed in the micro-droplets. The peak velocities of plasma and combustion wave appear earlier in the pre-focus position than in the post-focus position. This research provides a reference for the field of laser processing using fused silica as the substrate.

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Section: Flow Field Experiments At Focus Positionmentioning

confidence: 98%

Study on the effect of focal position change on the expansion velocity and propagation mechanism of plasma generated by millisecond pulsed laser-induced fused silica

Wang

Cai

2023

Plasma Sci. Technol.

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“…If the laser power is chosen too high, the surface starts being ablated. This can induce signi cant damage to the silicon and is visible under the microscope [19]. The decrease in sheet resistance is somewhat softer and attenuated with applying laser speed.…”

Section: Effect Of Laser Parameters On Sheet Resistancementioning

confidence: 99%

Investigation of laser doping on the formation of selective emitter solar cells

Meziani,

Moussi,

Chaouchi

et al. 2023

Preprint

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We investigated laser parameters for a laser doping (LD) process that enables to improve cell characteristics through the formation of a selective emitter (SE) multicrystalline silicon solar cell. In this work, the aim is the formation of SE with an investigation of the effect of critical LD parameters, such as laser power and laser speed. The LD 532 nm is used to obtain highly doped regions and deep doping depth that will receive the screen printed silver grid contact. The optimized laser power and speed of 80%, 500 mm/s, induced the activation of the phosphorus dopant and its diffusion in the silicon then leads to a local decrease of the emitter sheet resistance from 60 Ω/sqr to 30 Ω/sqr. Moreover, it was determined by SIMS and ECV measurements that the dopant concentration increased and the doping depth became deeper in the selective emitter formed by increasing laser power and/or laser speed. Fortunately, the surface cracks damage were not observed. The only damage caused by laser irradiation evidenced by debris and a melted surface. We have successfully developed SE p-type mc-Si 4 inch wafer produced by CRTSE solar cell with FF significantly improved of 1.01%. The conversion efficiency of solar cells with selective emitter formed by LD was increased. This gain is due to improved short-circuit current density and open-circuit voltage.

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“…When moved from the interstitial position to the substituted position, the inactive phosphorus atoms in the emitter become electrically active [38]. If excessively high laser power is selected, the ablation of the surface is initiated, leading to severe silicon damage that can be visualized under microscopy [39]. As depicted in red circle position of Figure 5c, excessive heat provided by lasers causes the ablation of mask layers and melting on transmitter surfaces, resulting in debris upon solidification on wafer surfaces [40].…”

Section: Morphologies Analysismentioning

confidence: 99%

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Liu,

Guo,

Liu

et al. 2024

Materials

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Selective emitter (SE) technology significantly influences the passivation and contact properties of n-TOPCon solar cells. In this study, three mask layers (SiOx, SiNx, and SiOxNy) were employed to fabricate n-TOPCon solar cells with phosphorus (P)-SE structures on the rear side using a three-step method. Additionally, phosphosilicon glass (PSG) was used to prepare n-TOPCon solar cells with P-SE structure on the rear side using four-step method, and the comparative analysis of electrical properties were studied. The SiOx mask with a laser power of 20 W (O2 group) achieved the highest solar cell efficiency (Eff, 24.85%), The open-circuit voltage (Voc) is 2.4 mV higher than that of the H1 group, and the fill factor (FF) is 1.88% higher than that of the L1 group. Furthermore, the final Eff of solar cell is 0.17% higher than that of the L1 group and 0.20% higher than that of the H1 group. In contrast, using the four-step method and a laser power of 20 W (P2 group), a maximum Eff of 24.82% was achieved. Moreover, it exhibited an Voc, which is elevated by 3.2 mV compared to the H1 group, and FF increased by 1.49% compared to the L1 group. Furthermore, the overall Eff of the P2 group outperforms both the L1 and H1 groups by approximately 0.14% and 0.17%, respectively. In the four-step groups, the Eff of each laser condition group was improved compared with the L1 group and H1 group, The stability observed within the four-step method surpassed that of the three-step groups. However, in terms of full-scale electrical properties, the three-step method can achieve comparable results as those obtained from the four-step method. This research holds significant guiding implications for upgrading the n-TOPCon solar cell rear-side technology during mass production.

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Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Cited by 12 publications

References 20 publications

Study on the effect of focal position change on the expansion velocity and propagation mechanism of plasma generated by millisecond pulsed laser-induced fused silica

Study on the effect of focal position change on the expansion velocity and propagation mechanism of plasma generated by millisecond pulsed laser-induced fused silica

Investigation of laser doping on the formation of selective emitter solar cells

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

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