Experimental Techniques

Tanner, B. K.

doi:10.1016/b978-0-08-019692-3.50009-9

Cited by 8 publications

(5 citation statements)

References 88 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, in the center of the hillock strain field image in Fig. 8(c) there is a small gray dot having a similar contrast to that produced by the defect-free GaInP lattice between hillocks, which by again applying the dynamical theory of diffraction [18] suggests that the strain directly under the center of the hillock is smaller than under its edges. Thus, the strain field inflicted to the surrounding GaInP/GaAs/Ge lattice by the hillock is rather complicated, being weak directly under the hillock, growing compressive under the edges of the hillock, but changing to tensile further away from the center.…”

Section: Resultsmentioning

confidence: 96%

“…8(c). Inside the white half-arc the contrast is completely black, which can be interpreted as the strain of the lattice suddenly changing from compressive to tensile when going away from the center of the strain field [18]. Moreover, in the center of the hillock strain field image in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In Figs. 8(a) and (b) the black-white contrast of the strain field images follows the direction of the diffraction vector g so that the lighter contrast is on the positive side of g, which according to the eikonal approximation of the dynamical theory of diffraction indicates that the hillocks put the lattice beneath them under tensile strain [18]. However, the shape of the contrast produced by the hillock strain field is more complicated, as can be seen in the enlargement of the 331 topograph in Fig.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

View full text Add to dashboard Cite

In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga 0:5094 In 0:4906 P epilayers having a þ 3:8 Â 10À4 lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga 0:4995 In 0:5005 P epilayers having a lattice mismatch of À3:5 Â 10 À4 to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 3 C. The Matthews-Blakeslee model for critical thickness was matched to the observed MD pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 3 mixed /1 0 1Sf1 1 1g type, originate at the hillocks.

show abstract

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Typical wavelength employed in the experiment was approximately 0.15 nm, and the applied reflections included

\bar{1} \bar{1} 28

11 \bar{2} 8

1 \bar{2} 18

\bar{2} 118

1 \bar{1} 08

10 \bar{1} 8

, and 0008. Under these conditions, the X‐ray incidence depth varied between 5 μm and 80 μm . With synchrotron radiation, it is possible to select the X‐ray wavelength arbitrarily.…”

Section: Methodsmentioning

confidence: 99%

“…The observation is not disturbed by the images of a large amount of dislocations, stacking faults, and likes in the wafers. This method is very convenient for observation of the surface of 4H‐SiC wafer, inside of epitaxy films and inside of power semiconductor elements . In this study, incident X‐ray of good parallelity was required for a higher image resolution.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

Matsuhata¹,

Yamaguchi²,

Sekiguchi

et al. 2016

Electrical Engineering Japan

View full text Add to dashboard Cite

SUMMARY Current 4H‐SiC wafers contain certain amount of dislocations, stacking faults, and other lattice‐defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg–Barrett X‐ray topography, we have applied this useful observation technique to 4H‐SiC technology to solve various technological issues. Appearances of scratch‐like surface morphology after epi‐film growth on very flat substrate surface by chemomechanically polish were examined by this technique, and the mechanism was discussed. Analyses of dislocation structure evolutions during epi‐film growth and also basal‐plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading‐screw dislocations on reliability of MOS structures and on current leakage in pn‐junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H‐Sic industries were obtained.

show abstract

The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis

Werner¹

1984

Thin Film and Depth Profile Analysis

View full text Add to dashboard Cite

Experimental Techniques

Cited by 8 publications

References 88 publications

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Analysis of Dislocation Structures in 4H‐SiC by Synchrotron X‐Ray Topography

The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis

Contact Info

Product

Resources

About