Experimental validation of crosstalk simulations for on-chip interconnects using S-parameters

Kobrinsky, Mauro J.; Chakravarty, S.; Jiao, Dan; Harmes, M.; List, S.; Mazumder, Md. Mohiuddin

doi:10.1109/tadvp.2004.841672

Cited by 36 publications

(14 citation statements)

References 2 publications

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“…High resolution cross-sectional scanning electron microscopy and optical microscopy were used to measure the relevant dimensions of the fabricated structures. Parasitics signals were removed from the measured S-parameters using a de-embedding approach [1], [36]. In Fig.…”

Section: Numerical Resultsmentioning

confidence: 99%

A Fast Frequency-Domain Eigenvalue-Based Approach to Full-Wave Modeling of Large-Scale Three-Dimensional On-Chip Interconnect Structures

Jiao

Zhu

Chakravarty

2008

IEEE Trans. Adv. Packag.

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S., "A fast frequency-domain eigenvalue-based approach to full-wave modeling of large-scale three-dimensional on-chip interconnect structures" (2008) Abstract-As on-chip circuits have scaled into the deep submicron regime, electromagnetics-based analysis has increasingly become essential for high-performance integrated circuit (IC) design. Not only fast, but also high-capacity electromagnetic solutions are demanded to overcome the large problem size facing on-chip design community. In this paper, we present a novel, high-capacity, and fast approach to the full-wave modeling of 3-D on-chip interconnect structures. In this approach, the interconnect structure is decomposed into a number of seeds. In each seed, the original wave propagation problem is represented as a generalized eigenvalue problem. The resulting eigenvalue representation can comprehend both conductor and dielectric losses, arbitrary dielectric and conductor configuration in the transverse cross section, and arbitrary material. A new mode-matching technique applicable to on-chip interconnects is developed to solve large-scale 3-D problems by using 2-D-like CPU time and memory. A junction matrix acceleration technique is proposed to speed up the mode matching process. A fast frequency sweep technique is employed to obtain the response over the entire frequency band by solving at one or a few frequency points only. An extraction technique is developed to obtain S-parameters from the solution of the eigenvalue system. The entire procedure is numerically rigorous without making any theoretical approximation. Experimental and numerical results demonstrate its accuracy and efficiency.

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Section: Numerical Resultsmentioning

confidence: 99%

A Fast Frequency-Domain Eigenvalue-Based Approach to Full-Wave Modeling of Large-Scale Three-Dimensional On-Chip Interconnect Structures

Jiao

Zhu

Chakravarty

2008

IEEE Trans. Adv. Packag.

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“…There are other possible ways of bisecting the THRU. T-equivalent-based bisection is one example (Kobrinsky et al, 2005). Once the foundations of the 2-port method are more firmly established, the multiport method can be used with greater confidence.…”

Section: Discussionmentioning

confidence: 99%

A Thru-Only De-Embedding Method Foron-Wafer Characterization of Multiport Networks

Amakawa¹,

Ishihara²,

Masu³

2010

Advanced Microwave Circuits and Systems

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“…Resistance and inductance are frequency-dependent parameters [18], and frequency dependency of R and L is modeled with W-element in the R(f)L(f)C model. As for frequency independent parameters, such as R, L, and C in RLC model and C in R(f)L(f)C model, interconnects are assumed to have the constant values in all frequency range.…”

Section: A Measurement and Simulation Setupmentioning

confidence: 99%

Measurement and Analysis of Inductive Coupling Noise in 90 nm Global Interconnects

Ogasahara¹,

Hashimoto

Onoye

2008

IEEE J. Solid-State Circuits

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Abstract-Inductive coupling is becoming a design concern for global interconnects in nanometer technologies. We present measurement results of the effect of inductive coupling on timing, and demonstrate that inductive coupling noise is a practical design issue in 90 nm technology. The measured delay change curve is consistent with circuit simulation results for an RLC interconnect model, and clearly different from those for a conventional RC model. The long-range coupling effect of inductive coupling, and noise reduction caused by ground insertion or decreased driver size were clearly observed on silicon. Examination of noise cancellation and superposition effects shown in measurement results confirm that the summation of delay variations due to each individual aggressor is a reasonable approximation of the total delay variation.

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Experimental validation of crosstalk simulations for on-chip interconnects using S-parameters

Cited by 36 publications

References 2 publications

A Fast Frequency-Domain Eigenvalue-Based Approach to Full-Wave Modeling of Large-Scale Three-Dimensional On-Chip Interconnect Structures

A Fast Frequency-Domain Eigenvalue-Based Approach to Full-Wave Modeling of Large-Scale Three-Dimensional On-Chip Interconnect Structures

A Thru-Only De-Embedding Method Foron-Wafer Characterization of Multiport Networks

Measurement and Analysis of Inductive Coupling Noise in 90 nm Global Interconnects

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