Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs

Slater, D.B.; Enquist, P.M.; Najjar, F.E.; Chen, M.Y.; Hutchby, J.A.; Morris, Arthur S.; Trew, R.J.

doi:10.1109/55.75701

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A Electron and Hole Mobilitv In Gaas1

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1992

1994

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Cited by 10 publications

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“…However the theory produced lower absolute values, about 100 cm2/vs, for this doping range. Finally, the square data ( 0 ) representes of the hole mobility in n-GaAs by Slater and coworkers [28]. This datum is consistent with the ZFTOF data of Lovejoy and coworkers.…”

Section: A Electron and Hole Mobilitv In Gaassupporting

confidence: 86%

Recombination lifetime and performance of III-V compound photovoltaic devices

Ahrenkiel¹,

Keyes²,

Durbin³

et al.

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)

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High-efficiency photovoltaic (PV) devices are based both on the 111-V compound and silicon semiconductor technologies. The 111-V semiconductors are more efficient than silicon for concentrator technology when the incident flux exceeds about 200 suns. These devices are of both single-and multijunction configurations, the latter being primarily feasible by the epitaxial growth of combinations of binary and ternary compounds. Work has focused on semiconducting materials in the GaAs and AlXGa,-& series, although other 111-Vs have recently been developed for PV applications. The role of the minority-carrier lifetime and mobility in high-efficiency devices is discussed. The state-of-the-art of current popular materials is reviewed.

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Section: A Electron and Hole Mobilitv In Gaassupporting

confidence: 86%