Experiments for Obtaining Cohesive-Zone Parameters for Copper-Mold Compound Interfacial Delamination

Krieger, William E. R.; Raghavan, Sathyanarayanan; Sitaraman, Suresh K.

doi:10.1109/tcpmt.2016.2589223

Cited by 32 publications

(16 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once the model is calibrated step by step with physical evidence such as the presented SAM and electric measurements, the creation of a finite element model permits to reduce the time needed for future assessment and to make very accurate analyses in terms of geometry and time resolution. Moreover, interface analysis can be enriched by the characterization of sintering adhesion properties and relevant fracture mode-mixity, which can be achieved by performing a set of experiments on dedicated specimens and applying an advanced theoretical model such as the cohesive zone model (CZM) [23].…”

Section: Discussionmentioning

confidence: 99%

Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

et al. 2021

View full text Add to dashboard Cite

The increasing demand in automotive markets is leading the semiconductor industries to develop high-performance and highly reliable power devices. Silicon carbide MOSFET chips are replacing silicon-based solutions through their improved electric and thermal capabilities. In order to support the development of these novel semiconductors, packaging technologies are evolving to provide enough reliable products. Silver sintering is one of the most promising technologies for die attach. Due to their superior reliability properties with respect to conventional soft solder compounds, dedicated reliability flow and physical analyses should be designed and employed for sintering process optimization and durability assessment. This paper proposes an experimental methodology to optimize the pressure value applied during the silver sintering manufacturing of a silicon carbide power MOSFET molded package. The evaluation of the best pressure value is based on scanning electron microscopy performed after a liquid-to-liquid thermal shock reliability test. Furthermore, the sintering layer degradation is monitored during durability stress by scanning the acoustic microscopy and electric measurement of a temperature sensitive electric parameter. Moreover, mechanical elastoplastic behavior is characterized by uniaxial tensile test for a bulk sample and finite element analysis is developed to predict the mechanical behavior as a function of void fraction inside sintering layer.

show abstract

Section: Discussionmentioning

confidence: 99%

Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

et al. 2021

View full text Add to dashboard Cite

show abstract

“…The FPB loading configuration produces a constant moment between the inner loading pins. As a result, steady-state interfacial delamination occurs along the interface, evidenced by displacement increasing at a constant critical load [6]. FPB is considered an effective test method for evaluating the critical interfacial energy release rate for a bi-material interface in mixed mode loading conditions [7].…”

Section: Fig 1 Methods Of Interface Characterization [1]mentioning

confidence: 99%

Ensuring Accurate Results in Fracture Mechanics Four-Point Bending Interface Characterization

Talledo¹

2021

JERR

View full text Add to dashboard Cite

Interface adhesion tests are conducted to obtain a quantitative value of the adhesion strength or interface fracture toughness to forecast initiation and propagation of interface delamination failures in semiconductor packages. One of the common methods of fracture mechanics interface characterization is the four-point bending test. Problems with the experimental setup would result in having inaccurate results. In this study, different issues with the four-point bending test using mold/copper bi-material beam with notch were addressed. It was shown that incorrect anvil alignment and centering could give inaccurate fracture toughness results. The distance between anvil supports and the depth of the notch is also very important. From the study, it can be concluded that issues with experimental setup and the test sample must be addressed to ensure accurate results from four-point bending interface characterization.

show abstract

“… ( a )

comparison with the Cu–EMC [ 2 , 3 , 4 , 5 , 21 ] and polyimide–silicon interfaces [ 7 ] from the literature and ( b ) m and ( c )

comparison with the Cu–EMC [ 2 ] and SiN–polyimide [ 7 ] interfaces from the literature. …”

Section: Figurementioning

confidence: 99%

Mode I Fatigue and Fracture Assessment of Polyimide–Epoxy and Silicon–Epoxy Interfaces in Chip-Package Components

Morais,

Akhavan-Safar,

Carbas

et al. 2024

Polymers

View full text Add to dashboard Cite

Semiconductor advancements demand greater integrated circuit density, structural miniaturization, and complex material combinations, resulting in stress concentrations from property mismatches. This study investigates the failure in two types of interfaces found in chip packages: silicon–epoxy mold compound (EMC) and polyimide–EMC. These interfaces were subjected to quasi-static and fatigue loading conditions. Employing a compliance-based beam method, the tests determined interfacial critical fracture energy values, (GIC), of 0.051 N/mm and 0.037 N/mm for the silicon–EMC and polyimide–EMC interfaces, respectively. Fatigue testing on the polyimide–epoxy interface revealed a fatigue threshold strain energy, (Gth), of 0.042 N/mm. We also observed diverse failure modes and discuss potential mechanical failures in multi-layer chip packages. The findings of this study can contribute to the prediction and mitigation of failure modes in the analyzed chip packaging. The obtained threshold energy and crack growth rate provide insights for designing safe lives for bi-material interfaces in chip packaging under cyclic loads. These insights can guide future research directions, emphasizing the improvement of material properties and exploration of the influence of manufacturing parameters on delamination in multilayer semiconductors.

show abstract

Experiments for Obtaining Cohesive-Zone Parameters for Copper-Mold Compound Interfacial Delamination

Cited by 32 publications

References 31 publications

Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

Ensuring Accurate Results in Fracture Mechanics Four-Point Bending Interface Characterization

Mode I Fatigue and Fracture Assessment of Polyimide–Epoxy and Silicon–Epoxy Interfaces in Chip-Package Components

Contact Info

Product

Resources

About