2020
DOI: 10.1016/j.joule.2019.12.016
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Exploiting Electrical Transients to Quantify Charge Loss in Solar Cells

Abstract: Electrical transients enabled by optical excitation and electric detection provide a distinctive opportunity to study the charge transport, recombination and even the hysteresis of a solar cell in a much wider time window ranging from nanoseconds to seconds. However, controversies on how to exploit these investigations to unravel the charge loss mechanism of the cell have been ongoing. Herein, a new methodology of quantifying the charge loss within the bulk absorber or at the interfaces and the defect properti… Show more

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Cited by 77 publications
(54 citation statements)
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References 74 publications
(125 reference statements)
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“…The density of states (DOS) is further derived from the equation: DOS-(E ω ) = À V D /(eW)•ω/(KT)•dC/dω, where V D is the depletion potential of the measured device, e is the electron charge, W is the depletion width and K is the Boltzmann constant. [22] As shown in Figure 4e, the defects in these two perovskites have a Gaussian-type distribution with similar energy broadening. Apparently, the target CsPbI 3 exhibits a lower trapstate density, in agreement with SCLC results.…”
Section: Methodsmentioning
confidence: 79%
“…The density of states (DOS) is further derived from the equation: DOS-(E ω ) = À V D /(eW)•ω/(KT)•dC/dω, where V D is the depletion potential of the measured device, e is the electron charge, W is the depletion width and K is the Boltzmann constant. [22] As shown in Figure 4e, the defects in these two perovskites have a Gaussian-type distribution with similar energy broadening. Apparently, the target CsPbI 3 exhibits a lower trapstate density, in agreement with SCLC results.…”
Section: Methodsmentioning
confidence: 79%
“…The higher photocarrier mobility, longer carrier lifetime, and lower trap density are favorable for reducing the charge carrier recombination rate and achieving higher J sc and FF. [ 15,52–54 ]…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the charge loss of our CsPb 1−x Ge x I 3 -based PSCs while working has been quantitatively evaluated by modulated electrical transient technique. [23] Transient photocurrents under 0 or 0.9 V bias voltage are given in Figure 4h. We can see that, the two devices based on CsPb 0.95 Ge 0.05 I 3 and CsPbI 3 exhibit different photocurrent decay behaviors, and non-radiative recombination occurs at a higher bias voltage.…”
Section: Resultsmentioning
confidence: 99%