Exploration of Near-Infrared Organic Photodetectors

Abstract

Near-infrared organic photodetectors (NIR OPDs) own some unique properties such as tailorable optoelectronic properties, ease of processing, compatibility with flexible substrates, and operation at room temperature. Therefore, NIR OPDs are attractive candidates for future electronic products due to the increasingly desired for wearable electronic devices and biomedical applications. In order to fulfill this goal, it is extremely necessary to fabricate high-performance NIR OPDs. In this review, we present a broad overview of advances in NIR OPDs from the perspective of material selection and device performance optimization over the past decade, and we also summarize the potential applications of NIR OPDs. At last, we undergo a deep discussion about the challenges and prospects for the future development of organic NIR OPDs.

High‐Performance Circularly Polarized Light‐Sensing Near‐Infrared Organic Phototransistors for Optoelectronic Cryptographic Primitives

“…This performance is superior to that of previously reported NIR phototransistors based on small-bandgap polymers (hole mobility ranges from 10 −4 to 10 −1 cm 2 V −1 s −1 ), which can be used as NIR-sensing materials, for a single component photoactive channel layer in NIRsensing thin-film OPTRs. [41] The NIR-sensing characteristics of the PODTPPD-BT phototransistors were evaluated under unpolarized light, as shown in Figure 2c-f. The top side of the device was illuminated by two monochromatic light sources with wavelengths of 830 nm and 920 nm and various optical powers.…”

Photomultiplication type near‐infrared organic photodetectors with a mixed active layer

“…[1][2][3] Although most commercialized PDs are built on inorganic materials, organic PDs (OPDs) have drawn more and more attention in recent years due to their simple device structure, low-cost, and compatible with various substrates. [4][5][6][7][8][9] According to the working mechanism, there are two types of PDs. The external quantum efficiency (EQE) of a photodiode-type PD is lower than unity, while it is opposite for the photomultiplication-type PDs.…”

Asymmetrical benzo[a]-fused N2O2-boron-chelated BODIPYs as red to near-infrared absorbing chromophores: synthesis, characteristics and device applications for opto-electronics

“…The increase in the forward injection of current under NIR irradiation was ascribed to direct dissociation of the photoexcited electron-hole pairs. The results suggest that a sophisticated combination of dye 2 with an n-type acceptor would allow for NIR photodiodes with a p-n interface 69 and deserve further investigation.…”