2023
DOI: 10.1021/acs.jpcc.3c00779
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Exploration of Photocatalytic Overall Water Splitting Mechanisms in the Z-Scheme SnS2/β-As Heterostructure

Abstract: The Z-scheme heterostructure photocatalysts have irreplaceable advantages over other heterostructures due to their ability to separate the spatial carriers and retain strong redox ability. In this study, we explored the SnS2/β-As (β-arsenene) van der Waals heterostructure with Z-scheme properties and suitable band edge positions as a potential photocatalyst for overall water splitting. Under appropriate conditions, the hydrogen evolution reaction (HER) barrier is much closer to 0. Based on the oxidation produc… Show more

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Cited by 19 publications
(10 citation statements)
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“…Under an external potential of U = 2.10 V, it is evident that all free-energy profiles become negative and are going downhill, indicating that the OER is exothermic and can proceed with minimal kinetic hindrance to catalyze water oxidation in this condition from an energy standpoint. The selected U value is much lower than that of other 2D photocatalysts 49–52 and requires only an overpotential of 0.56 V. It is worth noting that the required overpotential is comparable or much less than those reported for other 2D materials, such as g-C 3 N 4 (0.43 V), 53 the broadly studied catalyst γ(Ni, Fe)OOH (0.56 V), 54 GaAs (1.39 V), 55 C 2 N-based heterostructures (0.94–1.47 V), 56 β-Te 2 X (X = S, Se) (1.30–2.01 V) 57 and CuCl (1.53 V). 58 Researchers have also found that materials with intrinsically low photocurrents can be induced to better exhibit a photocurrent by applying an external voltage.…”
Section: Resultsmentioning
confidence: 86%
“…Under an external potential of U = 2.10 V, it is evident that all free-energy profiles become negative and are going downhill, indicating that the OER is exothermic and can proceed with minimal kinetic hindrance to catalyze water oxidation in this condition from an energy standpoint. The selected U value is much lower than that of other 2D photocatalysts 49–52 and requires only an overpotential of 0.56 V. It is worth noting that the required overpotential is comparable or much less than those reported for other 2D materials, such as g-C 3 N 4 (0.43 V), 53 the broadly studied catalyst γ(Ni, Fe)OOH (0.56 V), 54 GaAs (1.39 V), 55 C 2 N-based heterostructures (0.94–1.47 V), 56 β-Te 2 X (X = S, Se) (1.30–2.01 V) 57 and CuCl (1.53 V). 58 Researchers have also found that materials with intrinsically low photocurrents can be induced to better exhibit a photocurrent by applying an external voltage.…”
Section: Resultsmentioning
confidence: 86%
“…The SnS 2 /β-As heterostructure exhibits both thermodynamic and kinetic stability. The lattice constants of SnS 2 and β-As monolayers are 3.68 and 3.61 Å, respectively, and their lattice mismatch is only 1.9%. As can be seen from Figure S1, the projected band structures and density of states reveal that the S-p orbitals of SnS 2 primarily contribute to the conduction band minimum (CBM).…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the OER cannot proceed through a traditional four-electron step. Instead, there is a possibility that the OER may proceed through a new pathway facilitated by the HOOH* intermediate, acting as a bridge for subsequent reactions . The HOOH* state can be considered as a precursor to the generation of H 2 O 2 .…”
Section: Resultsmentioning
confidence: 99%
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