2013
DOI: 10.1016/j.mee.2012.08.007
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Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices

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Cited by 7 publications
(4 citation statements)
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“…This layer fully covered the RuO x catalysts (Figure f). On the other hand, since the AZO layer is based on ZnO, it can react with the alkaline solution based on KOH by the following reaction The H 2 O from this reaction attacks the Cu 2 O NW core.…”
Section: Resultsmentioning
confidence: 99%
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“…This layer fully covered the RuO x catalysts (Figure f). On the other hand, since the AZO layer is based on ZnO, it can react with the alkaline solution based on KOH by the following reaction The H 2 O from this reaction attacks the Cu 2 O NW core.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, since the AZO layer is based on ZnO, it can react with the alkaline solution based on KOH by the following reaction. 38 ZnO…”
mentioning
confidence: 99%
“…In order to fabricate more reliable and high density novel RRAM devices, CMP has been carried out in various forms to planarize the different materials. [13][14][15] Lee et al 13 improved the interface contact by CMP which provide better switching properties' uniformity. Based on the changing pH values, Yin et al 14 conducted a fundamental investigation on the removal rate and RMS roughness of VO x CMP.…”
mentioning
confidence: 99%
“…Based on the changing pH values, Yin et al 14 conducted a fundamental investigation on the removal rate and RMS roughness of VO x CMP. Zhang et al 15 studied on the effect of various chemical and mechanical factors on performance including removal rate and surface topography of ZnO thin films.…”
mentioning
confidence: 99%