Exploring SiSn as channel material for LSTP device applications

Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Rader, Kelly; Sevilla, Galo A. Torres; Schwingenschlögl, Udo; Hussain, Muhammad Mustafa

doi:10.1109/drc.2013.6633809

Cited by 8 publications

(4 citation statements)

References 2 publications

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“…The bandgap of Si 1-x Sn x , tuned by manipulating the Sn atomic concentration, [26] allowed researchers to alter the compound's characteristics to suit their device applications. Consequently, they have been utilized in the fabrication of p-MOSFETs, [27] MuGFETs, [26] MOSCAPs, [28] diodes, [29] low standby power (LSTP) devices, [30] and photovoltaic devices. [31] Due to their optical and electrical properties, Si 1-x Sn x alloys have emerged as promising candidates for temperature sensing materials.…”

Section: Introductionmentioning

confidence: 99%

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

ElGhonimy

Abdel‐Rahman

Hezam

et al. 2021

Physica Status Solidi (b)

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Herein, the prospect of using amorphous Si1–x Sn x alloys as alternative temperature‐sensing active materials in microbolometers is evaluated by studying their temperature‐dependent resistive properties along with their infrared optical properties. Si1–x Sn x thin films (200 nm thick), with varying Sn concentrations, are prepared at room temperature by cosputtering from Si and Sn targets using simultaneous radio frequency and DC magnetron sputter deposition. Low beam energy X‐ray microanalysis is used to estimate the atomic concentrations of the prepared films. Atomic force microscopy analysis shows an increase in the root‐mean‐square surface roughness of the prepared Si1–x Sn x thin films, with increasing Sn content. Sheet resistance versus temperature measurements are performed yielding temperature coefficients of resistance of 3.25, 2.65, and 1.72% K−1 at resistivity values of 116.18, 27.36, and 2.34 Ω cm for Sn concentrations of 35%, 44%, and 48%, respectively. Infrared ellipsometry measurements are performed to extract the optical properties of the Si1–x Sn x thin films and optical simulations confirm that a Fabry–Pérot cavity microbolometer configuration containing an Si1–x Sn x thin film can achieve high absorptance in the 8–12 μm band. This study shows that Si1–x Sn x alloys are a suitable, simple, and low‐cost replacement for thermometer layers used in uncooled infrared microbolometers.

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Section: Introductionmentioning

confidence: 99%

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

ElGhonimy

Abdel‐Rahman

Hezam

et al. 2021

Physica Status Solidi (b)

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“…Alternate channel materials using group IV materials such as Si1-xGex, Si1-xSnx, Ge1-xSnx, Ge offer the unique advantage of high charge carrier mobility and injection velocity on account of their low effective mass (m * ) compared to plain silicon [13][14][15]. Traditionally, p-channel transistors have shown typically low drive currents compared to their n-channel counterparts due to the fact that holes are effectively heavier than electrons.…”

Section: Si1-xgex Alternate Channel Nanotube Transistorsmentioning

confidence: 99%

Group IV nanotube transistors for next generation ubiquitous computing

et al. 2014

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Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective.

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“…Hence, it is also expected that the reverse breakdown voltage for a semiconductor with lower band gap should be lower. Since we have shown the band gap of SiSn to be lower than silicon in our previous work, [26][27][28][29] we expect the built-in potential and the reverse breakdown voltage to be lower for SiSn compared to silicon.…”

mentioning

confidence: 99%

“…In our previous work, we have shown that SiSn band gap can indeed be varied by changing the Sn concentration in silicon lattice. [26][27][28][29] It is expected from literature that Sn atoms in SiSn occupy the substitutional position in the silicon lattice. 30 This causes the band structure of the lattice to change, since there is change in the 3D potential distribution due to the incorporation of a large positively charged nucleus at a substitutional position.…”

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confidence: 99%

SiSn diodes: Theoretical analysis and experimental verification

Hussain

Wehbe

Hussain

2015

Applied Physics Letters

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We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.

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Exploring SiSn as channel material for LSTP device applications

Cited by 8 publications

References 2 publications

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

Group IV nanotube transistors for next generation ubiquitous computing

SiSn diodes: Theoretical analysis and experimental verification

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