Exploring superlattice DBR effect on a micro-LED as an electron blocking layer

Yan, Gewei; Hyun, Byung Ryool; Jiang, Fulong; Kuo, Hao Chung; Liu, Zhaojun

doi:10.1364/oe.433786

Cited by 15 publications

(12 citation statements)

References 37 publications

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“…As can be seen in Table 1, the IQE at drive current of the two types of LEDs is almost equal, and the rise in EQE is caused by a rise in LEE. [96], with the permission of Optical Society of America An inclined mesa favors the optical reflection towards the substrate and can be an easier approach to increase the LEE [97][98][99]. Hang at al have numerically investigated and demonstrated the impact of different inclination mesa angles on the optical and electrical properties for GaN-based µLEDs [99].…”

Section: Increasing the Lee For µLedsmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang¹,

Xu²,

Kang³

et al. 2023

Preprint

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GaN-based micro-size light-emitting diodes (µLEDs) have a number of appealing and distinctive benefits for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, less self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is the serious barrier for applications of µLEDs. In this work, the reasons for the poor EQE of µLEDs are reviewed, as well as the optimization techniques for improving the EQE of µLEDs.

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Section: Increasing the Lee For µLedsmentioning

confidence: 99%

Recent Advances on GaN-Based Micro-LEDs

Zhang¹,

Xu²,

Kang³

et al. 2023

Preprint

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“…[39] However, it should be acknowledged that the potential of typical QW LEDs for further improvement is limited, which can be seen from Figure 3e where results on QW LEDs reported in the technical literature are summarized. [40][41][42][43][44][45][46][47][48][49][50][51] Even for largesize SSL LEDs fabricated under state-of-the-art techniques where size-dependent effect can be neglected, the J PEAK (several A cm −2 ) is still far higher than the expected working current density for Micro-LEDs. This is partially because carriers tend to form Wannier excitons (rather than Frenkel excitons in GaN-based materials), where the carrier interaction is much looser than that in OLEDs so that a large n cannot be achieved naturally.…”

Section: Carrier Recombination At Low Current Densitymentioning

confidence: 99%

Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro‐LEDs for Displays

Wang

Hao

et al. 2022

Laser & Photonics Reviews

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Scaling‐down is the most significant technical strategy to improve performance for microelectronic devices, which is first performed systematically by Robert H. Dennard for silicon integrated circuits. Its main idea is that device parameters such as doping and junction depth must be adjusted when shrinking the dimensions of a field‐effect transistor so that the power density can remain unchanged. Recently, miniaturization of light‐emitting diodes or “microscale light‐emitting diodes (Micro‐LEDs)” is gaining much attention because of their potential for superior display technologies. However, the scaling‐down of LEDs used for solid‐state lighting (SSL) results in extremely low efficiency devices, with the reasons and underlying device physics still unclear. Here the law of Micro‐LED scaling is proposed in analogy to Dennard scaling, through which new perspectives are provided to comprehensively understand the root cause of Micro‐LED inefficiency and the scientific challenges to be addressed for mass commercialization, including subthreshold radiation, size‐dependent effect, and the enhancement of carrier recombination at low current density.

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“…[5][6][7] Nitride microLEDs were firstly introduced by Jiang's group in 2000, [8] and a 10 × 10 pixel microdisplay based on blue nitride microLEDs was presented by this group in 2001. [9] From then on, many research groups and companies have been working on this area, covering epitaxy, [10][11][12][13][14][15] device fabrication [4,6,16,17] and display manufacturing. [9,[18][19][20] In 2014, Apple entered this area by acquiring LuxVue, a company founded in 2009 for microLED displays based on pick-and-place technology.…”

Section: Introductionmentioning

confidence: 99%

Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets

Bi¹,

Gustafsson²,

Samuelson³

2023

Chinese Phys. B

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Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions, augmented/mixed realities and head-up displays, and also on optogenetics, high-speed light communication. The conventional top-down technology uses dry etching to define the LED size, leading to damage to the LED side walls. Since sizes of microLEDs approach the carrier diffusion length, the damaged side walls play an important role, reducing microLED performance significantly from that of large area LEDs. In this paper, we review our efforts on realization of microLEDs by direct bottom-up growth, based on selective area metal-organic vapor phase epitaxy. The individual LEDs based on either GaN nanowires or InGaN platelets are smaller than 1 μm in our approach. Such nano-LEDs can be used as building blocks in arrays to assemble microLEDs with different sizes, avoiding the side wall damage by dry etching encountered for the top-down approach. The technology of InGaN platelets is especially interesting since InGaN quantum wells emitting red, green and blue light can be grown on such platelets with a low-level of strain by changing the indium content in the InGaN platelets. This technology is therefore very attractive for highly efficient microLEDs of three primary colors for displays.

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Exploring superlattice DBR effect on a micro-LED as an electron blocking layer

Cited by 15 publications

References 37 publications

Recent Advances on GaN-Based Micro-LEDs

Recent Advances on GaN-Based Micro-LEDs

Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro‐LEDs for Displays

Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets

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