Exploring the 65nm frontier of alternating phase shifting masks with a quartz dry etch chemistry

Anderson, Scott; Neubauer, Ralf; Kumar, Ajay; Ibrahim, Isam M.

doi:10.1117/12.599984

Cited by 1 publication

(2 citation statements)

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“…If the side wall angle changes, the pattern profile, aerial image and process latitude are affected by this change. 4,6) Therefore, we investigated the influence of side wall angle variation. The optimum bias or undercut mask for 1 : 1 pitch is used in order to observe the side wall angle effect.…”

Section: Space Side Wall Angle Effectmentioning

confidence: 99%

“…By using an Alt-PSM, a 180 phase shifted transmission of light is created by alternating features on a mask utilizing interference effects to enhance the contrast of a wafer. 4) The wavelength of light is changed inside different materials that the light passes through. If the thickness of the quartz mask is different, the optical path and phase of the transmitted light is different even if the light entered with the same phase and traveled the same distance.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Optimum Biasing and Undercut for Single Trench Alternating Phase Shift Mask in 193 nm Lithography

Lee¹,

Kang²,

Shin³

et al. 2006

Jpn. J. Appl. Phys.

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The use of an alternating phase shift mask is an effective method of improving resolution compared with binary and embedded attenuated phase shift mask technologies, but the intensity imbalance between the light propagating through the zero- and π-shifted spaces is the main obstacle to be overcome. Several technical methods are proposed to compensate for such an imbalance in the mask manufacturing process. The known general solutions for the intensity imbalance are applying a space bias and/or an undercut of the space region of the alternating phase shift mask. We evaluated the uniformity of the resist profile after the application of a space bias or an undercut of the mask space region in order to minimize the pattern position displacement and the critical dimension difference between the phase-shifted and unshifted regions for the 90 and 65 nm nodes. Additionally, we found that the imperfect side wall angle of an undercut or a space bias obviously affected the quality of pattern fidelity and hence investigated how the side wall angle affects pattern printability.

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Section: Space Side Wall Angle Effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%