Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range 300 − 800 K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters of a = b = c = 4.445 Å . The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of ∼ −81 µV/K at room temperature. The |S| first increases till 560 K (∼ −93 µV/K) and then decreases up to 800 K (∼ −84 µV/K) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity, σ (thermal conductivity, κ) shows the monotonic decreasing (increasing) behaviour with the values of ∼5.2×10 5 (12.1 W/m-K) and ∼3.6×10 5 (14.2 W/m-K) Ω −1 m −1 at 300 K and 800 K, respectively. The κ exhibits the temperature dependency as, κ ∝ T 0.16 . The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the |S| above 560 K and change in the slope of σ around 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time (τ ) is computed by comparing the experimental σ with calculated σ/τ and it shows temperature dependency of 1/T 0.35 . Further this value of τ is used to calculate the temperature dependent electronic part of thermal conductivity (κe) and it gives fairly good match with the experiment. Present study suggests that electronic band-structure obtained from DFT provides reasonably good estimate of the transport coefficients of CoSi in the high temperature region of 300 − 800 K.