2022
DOI: 10.1021/acsami.1c20265
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Exploring the Effect of Cation Vacancies in TiO2: Lithiation Behavior of n-Type and p-Type TiO2

Abstract: TiO 2 offers several advantages over graphite as an anode material for Li-ion batteries (LIBs) but suffers from low electrical conductivity and Li-diffusion issues. Control over defect chemistry has proven to be an effective strategy to overcome these issues. However, defect engineering has primarily been focused on oxygen vacancies (V O ). The role of another intrinsic TiO 2 vacancy [i.e., titanium vacancies (V Ti )] with regard to the Li + storage behavior of TiO 2 has largely evaded attention. Hence, a comp… Show more

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Cited by 31 publications
(19 citation statements)
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“…The introduction of V O proved to be beneficial for improving its electronic conductivity and rate performance. However, a recent study revealed that the presence of V O beyond a certain limit increases the memory effect . Titanium vacancies ( V Ti ) can also help alleviate the limitations of rate performance of TiO 2 . However, the impact of V Ti on the memory effect in TiO 2 is yet to be illuminated. To this end, in this Letter, we elucidate the effect of both V Ti and V O on the memory effect in TiO 2 and shed light on the correlation of potential overshoot and delithiation voltage plateau length with the memory effect.…”
supporting
confidence: 52%
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“…The introduction of V O proved to be beneficial for improving its electronic conductivity and rate performance. However, a recent study revealed that the presence of V O beyond a certain limit increases the memory effect . Titanium vacancies ( V Ti ) can also help alleviate the limitations of rate performance of TiO 2 . However, the impact of V Ti on the memory effect in TiO 2 is yet to be illuminated. To this end, in this Letter, we elucidate the effect of both V Ti and V O on the memory effect in TiO 2 and shed light on the correlation of potential overshoot and delithiation voltage plateau length with the memory effect.…”
supporting
confidence: 52%
“…These results are consistent with the previously published behavior of TiO 2−α and Ti 1−β O 2 . 18 The memory effect in TiO 2−α -and Ti 1−β O 2 -based half-cells was evaluated using the protocol described in Figure 1A. First, the cells were subjected to a normal lithiation and delithiation cycle between 3 and 1 V. Then, they were fully lithiated to 1 V, but the delithiation step was carried out to only ∼40% of the SOC; this step is called the memory writing step.…”
mentioning
confidence: 96%
“…Furthermore, the peak positions were very similar in both materials, indicating that similar lattice defects were introduced during the nanostructuring of TiNbO 4 (Figure S5). A similar defect density is important to fairly compare two materials because defect density is known to greatly influence the Li storage behavior of oxide Li host materials. , …”
mentioning
confidence: 99%
“…To investigate the changes at the interface with an increase in t P , we performed electrochemical impedance spectroscopy (EIS) after each holding time. The Nyquist spectra of all samples consisted of three semicircles and a capacitive tail. , The first semicircle was attributed to the charge transfer at the solid-electrolyte interface (SEI) layer with the resistance of R SEI and the capacitance of C SEI . The second circle was assigned to the charge transfer at the particle interface.…”
mentioning
confidence: 99%