J Mater Sci: Mater Electron
 2024
DOI: 10.1007/s10854-024-13616-y
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Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

Renjia Zhang,
Kamale Tuokedaerhan,
Hongguo Du
et al.
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