Exploring the Morphotropic Phase Boundary in HfO₂‐Based Ferroelectrics for Advanced High‐k Dielectrics

Abstract

With the increasing demand for high‐performance computing and storage solutions, industries are under pressure to deliver enhanced‐density, high‐speed, cost‐efficient, and reliable memory technologies. The development of advanced high dielectric constant (high‐k) dielectrics for dynamic random‐access memory (DRAM) remains essential yet challenging, with a need for further advancements on scaling and mass production compatibility. A significant advancement has been the discovery of morphotropic phase boundary (MPB) in HfO2‐based ferroelectrics, offering a potential solution to enduring issues in DRAM capacitor technology. The superior performance of MPB‐based HfxZr1‐xO2 film systems as high‐k dielectrics (k > 60) provides a promising avenue for advancing DRAM technology. This review article aims to propel DRAM development by detailing the principles of MPB‐based high‐k dielectrics, outlining crucial material and engineering parameters, and addressing the need for precise evaluation and analysis, which have previously been neglected. It also discusses the ongoing challenges and future directions in this field.