2015
DOI: 10.1016/j.solener.2015.09.046
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Exploring the performance limiting parameters of perovskite solar cell through experimental analysis and device simulation

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Cited by 49 publications
(23 citation statements)
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“…In case of device B, the low forward bias region is dominated by higher shunt resistance which reflects the formation of a better rectification junction with a low leakage current between the selective contacts and absorber layer. [6] In the high forward bias region at V >0.8 V, for both devices, the net current plots are almost parallel and follow an exponential behavior due to the diode and recombination characteristics. The main difference lies in the lower order magnitude of net current in device B arising from the better interfacial junction and absorber quality.…”
Section: Resultsmentioning
confidence: 85%
“…In case of device B, the low forward bias region is dominated by higher shunt resistance which reflects the formation of a better rectification junction with a low leakage current between the selective contacts and absorber layer. [6] In the high forward bias region at V >0.8 V, for both devices, the net current plots are almost parallel and follow an exponential behavior due to the diode and recombination characteristics. The main difference lies in the lower order magnitude of net current in device B arising from the better interfacial junction and absorber quality.…”
Section: Resultsmentioning
confidence: 85%
“…The original capture cross-s of bottom and left electrode are of AM1.5 illumination was app between HTL and perovskite l sorption layer. Figure 1 shows we use in the simulation is [6,6] Eg (eV)…”
Section: Device Simulation Parametersmentioning
confidence: 99%
“…Energy diagrams of the constituting layers with different HTL materials are shown in Figure 6. These parameters are adopted from references [1][2][3][4][5][6][7][8]. To improve the accuracy of simulation results, we set the perovskite layers deposited on the two hole transport layers with different optical absorption coefficients in the software for simulation, the parameters of which come from the absorption spectra (Figure 4).…”
Section: Device Simulation Parametersmentioning
confidence: 99%
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“…for the analysis of CIGS and CdTe solar cell and was widely used for the optimal design of (CIGS, CdTe) solar cells [76]. But recently, SCAPS has emerged as an alternate numerical tool for the analysis of kesterite and perovskite solar cell [126][127][128][129][130][131].…”
Section: Efficiency Enhancement Of Solar Cellmentioning
confidence: 99%