2017
DOI: 10.1080/00207217.2017.1293171
|View full text |Cite
|
Sign up to set email alerts
|

Extended behavioural modelling of FET and lattice-mismatched HEMT devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 17 publications
0
3
0
Order By: Relevance
“…The model from Reference 21, initially created for modeling the I/V characteristics of LDMOS and MOSFET devices, 9,19,26 has been used to model the nonlinear HEMT I/V behavior 5‐8,10 due to its improved prediction of the nonlinear transconductance shape. Based on References 4 and 2, this work presents an empirical drain‐to‐source current model for HEMT GaAs and high power GaN devices.…”
Section: Model Descriptionmentioning
confidence: 99%
See 2 more Smart Citations
“…The model from Reference 21, initially created for modeling the I/V characteristics of LDMOS and MOSFET devices, 9,19,26 has been used to model the nonlinear HEMT I/V behavior 5‐8,10 due to its improved prediction of the nonlinear transconductance shape. Based on References 4 and 2, this work presents an empirical drain‐to‐source current model for HEMT GaAs and high power GaN devices.…”
Section: Model Descriptionmentioning
confidence: 99%
“…Several semi‐empirical analytical I DS ( V GS , V DS ) modeling techniques for GaN and GaAs HEMT devices have been developed, 3‐18 for example, table‐based Artificial Neural Networks (ANNs), or analytical modeling techniques. The table‐based model represents each element to be model with a lookup table developed from measured data.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation