2009
DOI: 10.1103/physrevb.80.205317
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Extended excitons and compact heliumlike biexcitons in type-II quantum dots

Abstract: We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is sho… Show more

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Cited by 32 publications
(27 citation statements)
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“…We observe a clear blueshift when increasing the excitation power density, a phenomenon that is commonly attributed to spatially indirect recombination. [15][16][17] However, since we are studying type-I two-dimensional structures, a spatial separation of the charge carriers is only possible by means of localized potential fluctuations that can separately trap electrons and holes. Indeed, the blueshift of the PL energy with increasing excitation power has also been attributed to carrier filling of the localized states.…”
Section: Resultsmentioning
confidence: 99%
“…We observe a clear blueshift when increasing the excitation power density, a phenomenon that is commonly attributed to spatially indirect recombination. [15][16][17] However, since we are studying type-I two-dimensional structures, a spatial separation of the charge carriers is only possible by means of localized potential fluctuations that can separately trap electrons and holes. Indeed, the blueshift of the PL energy with increasing excitation power has also been attributed to carrier filling of the localized states.…”
Section: Resultsmentioning
confidence: 99%
“…In both cases, a strong blueshift is seen, a feature that is characteristic of type-II systems and has been observed, for example, in GaSb/GaAs quantum wells, 17 GaSb/GaAs QD's, 1,15,16,18 and InP/GaAs QD's. 2 In the case of type-II quantum wells, it is believed that the shift is the result of band bending at the heterointerface due to charge separation. 17 The same explanation has also been invoked to explain the blueshift in the PL from type-II QD's.…”
Section: A Zero-field Photoluminescencementioning
confidence: 99%
“…It is important to note that because of the spatial separation of electrons and holes, such exciton complexes in these samples will be fundamentally different from those in type-I systems and are analogous to atoms and ions with electrons bound to a positively charged "nucleus." 2,14 The second possible reason for the difference in zero-field PL energy is a change in the hole confinement energies due to a difference in the size of the nanostructures between the two samples. However, confinement energies for holes are much less sensitive to size effects than for electrons, and the TEM data indicate no systematic change in QR base length or height between samples A and B.…”
Section: A Zero-field Photoluminescencementioning
confidence: 99%
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“…14 Strong blueshifts of emission energy with increasing excitation power are regularly seen in type-II systems. Capacitive charging, [15][16][17] band bending, [18][19][20][21][22][23] and state filling 24 are commonly used to explain the blueshift of the type-II QD/QR emission energy. But capacitive charging is believed to be dominant in the sample investigated here.…”
Section: Introductionmentioning
confidence: 99%