Extended-pulse excimer laser annealing of Pb(Zr1−xTix)O3 thin film on LaNiO3 electrode

Abstract

Comparing to conventional short-pulse (<30ns) excimer laser annealing, the extended pulse (374ns) can provide sufficient thermal energy and time into the Pb(Zr1−xTix)O3 (PZT) thin film to complete the crystallization, whereas the bulk of the material remains at low temperature. In this study, thermal simulation is presented to illustrate the temperature distribution in the specimen and the benefits of the extended pulse. With extended-pulse laser annealing, we observe a 50% improvement in remanent polarization because of the elimination of the amorphous layer on the PZT surface, which is also confirmed by cross-section transmission electron microscopy analysis. This low temperature process is suitable for embedded capacitor-over-interconnect ferroelectric random access memory for advanced system-on-chip applications.

Ultrafast crystallization kinetics in (Pb,La)(Zr0.30Ti0.70)O3 thin films by pulsed excimer laser annealing

“…The estimated L thermal is ~169 nm, so that L thermal > L optical for the laser operating parameters used here. several research groups have simulated the temperature profiles that develop under single-or multiple-pulse exposures to an excimer laser [13], [27]. In this work, comparable simulations were performed to describe the crystallization process.…”

“…as shown in Fig. 8, the PlZT sample undergoes extremely high heating rates (>6 × 10 10 K/s) for short times followed by rapid cooling for 3 10 c 400 c 7200 sio 2 1.6 740 2200 si 152 700 2330 a From [29], b from [30], and c from [27]. each laser pulse.…”

“…The thermal properties for each layer were taken from the literature [27], [29]- [31] as shown in Table I. several caveats should be added here regarding the modeling.…”

Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate

“…It can be easily prepared on silicon substrate [9]. It is also proved that the LNO can be used as seed layer to improve the fatigue performance of ferroelectric films [10,11] and to depress the leakage current in colossal permittivity material CaCu 3 Ti 4 O 12 (CCTO) [12]. Therefore, LNO is a potential material for the realization of high quality BFO film growing on silicon substrate.…”

Ultraviolet pulsed laser crystallization of Ba0.8Sr0.2TiO3 films on LaNiO3-coated silicon substrates

“…The optical and thermophysical properties of films and substrate used in the calculations were reported in refs [21,27,[42][43][44][45] and are summarized in the Supporting Information (Table S1).…”