Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials

Abstract

Extended short-wave infrared (SWIR) avalanche photodiodes based on III–V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 μm and 2.75 μm, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed.

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

“…Both temperature dependencies are described comparably in the relevant publications, e.g., ref. [27]. eSWIR SPAD characteristics under optical illumination are pending.…”

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

“…Especially for the SWIR band, APDs have several potential applications, including optical communication, quantum information, range-finding, coherent sensing, medical diagnostics, analytical apparatus, vehicle light detection and ranging (LIDAR), life science, etc. ( Figure 1 ) [ 7 , 8 , 9 , 10 , 11 , 12 ].…”