In this work, (Ba x Sr 1-x )Si 2 thin films were prepared by the co-sputtering method at various deposition temperatures. The constituent phase of the films primarily depended on the deposition temperature and the composition x. The composition to make a solid solution was expanded by lowering the deposition temperature, compared to that of bulk-sintered bodies. Further lowering the deposition temperature produced a metastable phase, which was a layered structure (trigonal, EuGe 2 -type structure), with a low thermoelectric power factor. Substitution with Ba led to an increase in the temperature showing the highest power factor. The samples with Ba concentrations over 17% showed the maximum power factor around room temperature. © 2020 The Japan Society of Applied Physics 2. Experimental (Ba x Sr 1-x )Si 2 films 1.0-2.5 μm in thickness were prepared on (001) Al 2 O 3 substrates by the RF magnetron co-sputtering method under Ar with 5% H 2 . Sintered bodies of SrSi 2 and BaSi 2 were used as sputtering targets. The deposition temperature was 600, 650, and 700 ºC, while the deposition pressure was kept at 100 mTorr. In order to control the film composition x, the RF power for BaSi 2 was changed from 0 to 50 W, while the power for the SrSi 2 target was fixed to 50 W. The target-substrate distance was maintained at 60 mm.The Ba/(Ba + Sr) ratio, the value of x, of the deposited film was measured by X-ray fluorescence spectrometry (XRF; PANalytical, PW4400). The constituent phase of the films was characterized by X-ray diffraction (XRD; Bruker AXS, D8 DISCOVER). Scans of the 2θ-θ mode were repeated by changing the sample inclination angle (ψ) under the sample rotation conditions. Integrated 2θ-θ scans were obtained by integration along the ψ direction. 27)