1999
DOI: 10.1103/physrevb.60.2720
|View full text |Cite|
|
Sign up to set email alerts
|

Extended statistical analysis of rough growth fronts in gold films prepared by thermal evaporation

Abstract: The surface roughness of evaporated gold films has been studied by scanning tunneling microscopy and a frequency analysis method that uses the whole image. The power spectrum S(q,t) presents a clear q Ϫ␥ dependence in the region of high frequencies and the interface width of the films follows a t ␤ behavior. The values obtained for the two exponents (␥ϭ4.1 and ␤ϭ0.26) agree with the theoretical predictions (␥ϭ4 and ␤ϭ0.25) for a process controlled by pure surface diffusion in the thickness range studied. The p… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

1
13
0

Year Published

2000
2000
2016
2016

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 21 publications
(14 citation statements)
references
References 35 publications
1
13
0
Order By: Relevance
“…One recent experimental paper [5], which reports the observation of mounded GaAs and InP growth with α ≈ 0.5 − 0.6, has explicitly made this case, and other recent reported mound formations [6] in semiconductor MBE growth are also consistent with our contention that mounds may arise from a large effective roughness exponent rather than a Schwoebel instability. Two very recent experimental publications [7] have reached the same conclusion in non-semiconductor MBE growth studies -in these recent publications [7] spectacular mounded surface growth morphologies have been interpreted on the basis of the fourth order conserved growth equations [10][11][12][13][14]. The crucial message of our simulated d=1+1 growth morphologies in Fig.…”
Section: Fig 2 the Height-height Correlation Function H(r) At 10supporting
confidence: 49%
See 4 more Smart Citations
“…One recent experimental paper [5], which reports the observation of mounded GaAs and InP growth with α ≈ 0.5 − 0.6, has explicitly made this case, and other recent reported mound formations [6] in semiconductor MBE growth are also consistent with our contention that mounds may arise from a large effective roughness exponent rather than a Schwoebel instability. Two very recent experimental publications [7] have reached the same conclusion in non-semiconductor MBE growth studies -in these recent publications [7] spectacular mounded surface growth morphologies have been interpreted on the basis of the fourth order conserved growth equations [10][11][12][13][14]. The crucial message of our simulated d=1+1 growth morphologies in Fig.…”
Section: Fig 2 the Height-height Correlation Function H(r) At 10supporting
confidence: 49%
“…In particular, we show that a large roughness exponent (without any ES barrier) as in the fourth order conserved growth universality class [10][11][12][13][14] produces mounded growth morphologies which are indistinguishable from the ES barrier effect. Any experimentally observed mounded morphology therefore requires a careful and detailed quantitative analyses [5][6][7] to determine the physical mechanism (e.g. ES barrier, edge diffusion, large roughness exponent without any ES barrier) underlying its cause -in particular, the existence of a mounded growth morphology by itself may not imply the existence of any significant Schwoebel barrier.…”
Section: Fig 2 the Height-height Correlation Function H(r) At 10mentioning
confidence: 99%
See 3 more Smart Citations