Extendibility of self-aligned type multiple patterning for further scaling

Yamauchi, Shohei; Hara, Arisa; Oyama, Kenichi; Natori, Sakurako; Yamato, Masatoshi; Yaegashi, Hidetami

doi:10.1117/12.2011953

Cited by 6 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 To overcome the limitations of lithography, multiple patterning methods-litho-etch or self-aligned multiple patterningwere used in the last four stages of device miniaturization based on nodes of 10-28nm (N10-N28). 5,6 To achieve the specifications for fins in N7/N5 devices, we need a self-aligned quadruple patterning (SAQP) method that provides a critical dimension (CD) of about 7nm, a CD uniformity (CDU) and pitch walk of 0.5nm (3 sigma), and a line width roughness (LWR) and line edge roughness (LER) of 1.4 and 1.2nm, respectively.…”

mentioning

confidence: 99%

Self-aligned quadruple patterning to meet requirements for fins with high density

Altamirano-Sánchez¹,

Tao²,

Gunay-Demirkol³

et al. 2016

SPIE Newsroom

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Self-aligned quadruple patterning to meet requirements for fins with high density

Altamirano-Sánchez¹,

Tao²,

Gunay-Demirkol³

et al. 2016

SPIE Newsroom

View full text Add to dashboard Cite

show abstract

“…87 The continuous slip in readiness of this technology has lead the industry to consider and adopt more expensive spacer defined double, triple, and even quadruple patterning schemes to enable 22 nm and below technologies. 88 The huge complexity and extreme costs of extending these approaches down to the single digit nm regime using current 193 nm immersion lithography 89 represents an immense opportunity for complementary or alternate approaches. Thin film deposition and etching techniques that are supremely selective to either metal or dielectrics is one capability that could greatly simplify such multiple patterning strategies.…”

mentioning

confidence: 99%

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

et al. 2013

View full text Add to dashboard Cite

Recent discussions concerning the continuation of Moore's law have focused on announcements by several major corporations to transition from traditional 2D planar to new 3D multi-gate field effect transistor devices. However, the growth and progression of the semiconductor microelectronics industry over the previous 4 decades has been largely driven by combined advances in new materials, lithography, and materials related process technologies. Looking forward, it is therefore anticipated that new materials and materials technologies will continue to play a significant role in both the pursuit of Moore's law and the evolution of the industry. In this research update, we discuss and illustrate some of the required and anticipated materials innovations that could potentially lead to the continuation of Moore's law for another decade (or more). We focus primarily on the innovations needed to achieve single digit nanometer technologies and illustrate how at these dimensions not only new materials but new metrologies and computational modeling will be needed.

show abstract

Combinatorial survey of fluorinated plasma etching in the silicon-oxygen-carbon-nitrogen-hydrogen system

Dhungana

Nordell

Caruso

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

New multipass optical lithography patterning methods needed to print features for future <10 nm technologies will demand an increasingly complex combination of hardmasks, antireflection coatings, spacers, and etch stopping materials with distinct yet complementary properties. Finding the right mix, however, has proven particularly challenging given that the materials most commonly used are drawn from a limited set of Si- and C-based solids comprising Si, C, O, N, and H. To understand and maximize the limits of this composition space, the authors have performed a combinatorial survey of the dry etch characteristics for the Si-C-O-N-H system with the goal of understanding material composition–etch interactions and identifying material subclasses with distinct etch properties. Over 50 thin films sampling Si-C-O-N-H composition space were surveyed using two fluorinated etches commonly utilized for selective patterning of SiO2 and a-SiN:H dielectrics (CHF3 and CF4/O2, respectively). It was found that the incorporation of oxygen in a-SiN:H allowed for significant tuning of the etch rate of a-SiON:H materials relative to SiO2. Additionally, increasing hydrogen content and nanoporosity significantly increased the etch rate of the various dielectric materials independent of the Si, C, O, and N content. The influence of carbon depended on whether it was incorporated as terminal organic groups, where it resulted in increased etch rates, or directly within the network of the material, where it resulted in decreased etch rates. Silicon- and carbon-rich materials exhibited very low etch rates in both etches and were found to have the most distinct and potentially complementary etch properties relative to SiO2 and a-SiN:H. Accordingly, a-C:H, a-Si:H, and a-SiC:H merit further examination as hardmask or spacer materials in future multipass patterning processes.

show abstract

Extendibility of self-aligned type multiple patterning for further scaling

Cited by 6 publications

References 1 publication

Self-aligned quadruple patterning to meet requirements for fins with high density

Self-aligned quadruple patterning to meet requirements for fins with high density

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

Combinatorial survey of fluorinated plasma etching in the silicon-oxygen-carbon-nitrogen-hydrogen system

Contact Info

Product

Resources

About