Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

Apicella, Valerio; Fasasi, Teslim Ayinde; Wong, Hon Fai; Leung, Chi Wah; Ruotolo, A.

doi:10.1016/j.apsusc.2020.147803

Cited by 3 publications

(1 citation statement)

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“…It has been recently reported [ 13 , 18 , 19 , 20 ] that a giant photo-Hall effect is induced in a novel device structure as mentioned above. A typical system consists of an ultra-thin Pt film that forms a Schottky contact to intrinsic Si.…”

Section: Introductionmentioning

confidence: 99%

Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions

Wang

Sun

Cui

et al. 2021

Sensors

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Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

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