Extending the Range of Controlling Protein Adsorption via Subsurface Architecture

Abstract

Extending the range of controlling protein adsorption via subsurface architecture. ACS Applied Materials and Interfaces.

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

“…Reducing the oxygen partial pressure and ion bombardment (by power and pressure variation), the deposition of less dense SiOx PPFs have been thoroughly studied in previous work using O 2 /HMDSO of 40/4 sccm (100 W, 7 Pa, with 20 sccm Ar admixture). [15,20] Ar admixture supports fragmentation, oxidation, and deposition of less dense SiOx at moderate ion bombardment conditions. [54] Such films have a specific density of 1.9 ± 0.1 g cm −3 with a chemical composition of SiO 1.9-2.0 C 0.4-0.5 indicating residual hydrocarbons.…”

“…Therefore, O 2 /Ar plasma etching (40/20 sccm, 100 W, 7 Pa) has previously been introduced to increase porosity after depositing the SiOx film as before. [15] The hydrocarbon etching resulted in chemical composition of SiO 2.2 with low, negligible carbon content indicating the incorporation of up to 10% Si-OH ([SiO 2 ] 0.9 •[Si (OH) 4 ] 0.1 ). The film density was reduced to 1.7 ± 0.1 g cm −3 after plasma etching.…”

“…Accordingly, enhanced water diffusion was observed by NR compared to SiOx. [15] Simulation results showed that demethylation is highly effective down to a depth of at least 15 nm for Ar/O 2 plasma etching of porous SiOCH. [59] To deposit thicker SiOx films of around 80 nm with enhanced porosity, named SiOx_100W, five deposition/etching cycles were thus applied using 1 min deposition (with a deposition rate of ~17 nm min −1 ) and 5 min etching at maintained power of 100 W by intermitting the HMDSO gas flow.…”

“…We have developed a special understanding of plasma deposition conditions involving gas phase and surface processes in intermittent combination with oxygen plasma etching to remove the organic hydrocarbon content. [14,15] Along these lines, we introduce plasma deposition/plasma etching cycles to deposit SiOx films with enhanced porosity from Ar/O 2 /HMDSO plasmas with intermittent Ar/O 2 plasma etching to remove residual hydrocarbons. The obtained silica-like network is porous and chemically stable, it has good mechanical properties and wear resistance, while it is transparentall properties of interest in many applications.…”

Plasma‐deposited AgOx‐doped TiOx coatings enable rapid antibacterial activity based on ROS generation

“…The 4-nm hydrophobic cover layer was deposited by plasma-enhanced chemical vapor deposition following an established protocol (10 s, Ar/HMDSO 20/4 sccm, 50 W, 7 Pa). [33][34][35] All plasma process steps were performed at low temperature (<70°C), thus allowing treatment of sensitive materials, such as polymers, textiles, nonwovens, or scaffolds.…”