Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors
Sihan Chen,
Yue Zhang,
William P. King
et al.
Abstract:Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contac… Show more
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