Extension of 193nm Lithography by Chemical Shrink Process

Sekito, Takashi; Matsuura, Yuriko; Nagahara, Tatsuro

doi:10.2494/photopolymer.29.761

J. Photopol. Sci. Technol.

2016

DOI: 10.2494/photopolymer.29.761

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Extension of 193nm Lithography by Chemical Shrink Process

Takashi Sekito

Yuriko Matsuura

Tatsuro Nagahara

Abstract: Roughness improvement of Negative Tone Development (NTD) photoresist by chemical shrink process is discussed in this paper for the extension of 193 nm lithography. Addition to feature size shrinkage, improvement of photoresist roughness is also important subject for advanced node device manufacturing. New shrink materials were evaluated by Scan Probe Microscope (SPM) and a material improved surface roughness by 37%. Moreover, 28% improvement of Contact Edge Roughness (CER) was confirmed.

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2024

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Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

Kim

2024

Micromachines

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For vertical interconnect access (VIA) in three-dimensional (3D) structure chips, including those with high bandwidth memory (HBM), shrinking contact holes (C/Hs) using the resist flow process (RFP) represents the most promising technology for low-k1 (where CD=k1λ/NA,CD is the critical dimension, λ is wavelength, and NA is the numerical aperture). This method offers a way to reduce dimensions without additional complex process steps and is independent of optical technologies. However, most empirical models are heuristic methods and use linear regression to predict the critical dimension of the reflowed structure but do not account for intermediate shapes. In this research, the resist flow process (RFP) was modeled using the evolution method, the finite-element method, machine learning, and deep learning under various reflow conditions to imitate experimental results. Deep learning and machine learning have proven to be useful for physical optimization problems without analytical solutions, particularly for regression and classification tasks. In this application, the self-assembly of cylinder-forming block copolymers (BCPs), confined in prepatterns of the resist reflow process (RFP) to produce small contact hole (C/H) dimensions, was described using the self-consistent field theory (SCFT). This research paves the way for the shrink modeling of the enhanced resist reflow process (RFP) for random contact holes (C/Hs) and the production of smaller contact holes.

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Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

Kim

2024

Micromachines

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Extension of 193nm Lithography by Chemical Shrink Process

Cited by 1 publication

References 9 publications

Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

Contact Hole Shrinkage: Simulation Study of Resist Flow Process and Its Application to Block Copolymers

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