Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method

Qiang, Lei; Liang, Xiaoci; Pei, Yanli; Yao, Ruohe; Wang, Gang

doi:10.1016/j.tsf.2018.01.020

Cited by 10 publications

(4 citation statements)

References 42 publications

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“…The output curves were measured in the V DS region of 0–20 V by varying V GS from 0 to 10 V in steps of 2 V. Because TiN doping deteriorated the electrical properties of IZO films and the on-current of the TFT, the drain current of the output curves decreased corresponding to the cosputtering power. Table compared the threshold voltage of InZnTiON-based TFTs with previously reported work …”

Section: Resultsmentioning

confidence: 99%

“…Table 3 compared the threshold voltage of InZnTiON-based TFTs with previously reported work. 53 To demonstrate the enhanced stability of TFTs with an InZnTiON channel, a positive bias stress test (PBS) and a negative bias stress test (NBS) were performed. The transfer curves for each condition are shown in Figure 7a,b, and the ΔV th results are shown in Figure 7c,d.…”

Section: Resultsmentioning

confidence: 99%

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InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Lee

Park

et al. 2023

ACS Appl. Mater. Interfaces

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In this study, we incorporated TiN as a carrier suppressor into an amorphous InZnO channel to achieve stable channels for thin-film transistors (TFTs) and light-emitting transistors (LETs). The low electronegativity and standard electrode potential of the Ti dopant led to a reduction in the number of oxygen vacancies in the InZnO channel. Moreover, the substitution of nitrogen into the oxygen sites of InZnO effectively decreased the excess electrons. As a result, the cosputtering of the TiN dopant resulted in a decrease in the carrier concentration of the InZnO channel, serving as an effective carrier suppressor. Due to the distinct structures of TiN and InZnO, the TiN-doped InZnO channel exhibited a completely amorphous structure and a featureless surface morphology. The presence of oxygen vacancies in the InZnO channel creates trap states for electrons and holes. Consequently, the TFT with the InZnTiON channel demonstrated an improved subthreshold swing and enhanced stability during the gate bias stress test. Furthermore, the threshold voltage shift (ΔV th ) changed from 3.29 to 0.86 V in the positive bias stress test and from −0.92 to −0.09 V in the negative bias stress test. Additionally, we employed an InZnTiON channel in LETs as a substitute for organic semiconductors. The reduction in the number of oxygen vacancies effectively prevented exciton quenching caused by hole traps within the vacancies. Consequently, appropriate TiN doping in the InZnO channel enhanced the intensity of the LET devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Lee

Park

et al. 2023

ACS Appl. Mater. Interfaces

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“…[ 13 ] The electrical properties of TFT devices are greatly influenced by the interface defects between the channel and insulator well as the roughness of the layers. [ 14 ] It is well‐known that a dielectric material with a smooth surface is essential to enable proper electronic device function. [ 1 ] For instance, despite having a high dielectric constant, classical high‐ k thin films such as ZrO 2 and HfO 2 are susceptible to forming a crystal structure with a rough surface.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Yang

Bahrami

Ding

et al. 2022

Adv Elect Materials

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SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD‐SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with a SbOx dielectric layer deposited at 200 °C from Sb(NMe2)3 and H2O2 presents excellent performance, such as a field effect mobility (µ) of 12.4 cm2 V−1 s−1, Ion/Ioff ratio of 4 × 108, subthreshold swing of 0.22 V dec−1, and a trapping state (Ntrap) of 1.1 × 1012 eV−1 cm−2. The amorphous structure and high areal capacitance of SbOx boosts the interface between the semiconductor and dielectric layer of TFT devices and provide a strong electric field for electrons to improve the device mobility.

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“…Of these, solution processes have the advantages of simple fabrication, low-temperature processing, and low cost [13][14][15][16][17][18][19] . In addition, oxygen (O 2 ) plasma treatment, photochemical activation, femtosecond laser treatment, and thermal annealing under an O 2 atmosphere were shown to improve the surface quality of the films and enhance the electrical properties of multi-stacked IZO TFTs [20][21][22] . The plasma pre-annealing treatment at low power (< 150 W) was demonstrated to improve the electrical properties of oxide TFTs by reducing the charge carrier concentration and conductivity, and offers the advantages of low cost, high efficiency, and large area uniformity 23,24 .…”

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confidence: 99%

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Zhao

Tarsoly

Shan

et al. 2022

Sci Rep

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This paper examined the effects of no treatment versus plasma treatment, and femtosecond laser irradiation as pre-annealing processes on indium zinc oxide (IZO) films and annealing at high temperatures. The plasma pre-annealed multilayer stacked IZO TFTs showed better electrical properties with mobility enhancement from 2.45 to 7.81 cm2/Vs, but exhibited diminished on–off current ratio (Ion/Ioff). The IZO thin-film transistor (TFT) prepared with femtosecond laser pre-annealing with low pulse energy generation (power of 3 W at 700 nm wavelength) for 100 s has also exhibited significantly improved electrical performance, the saturation mobility increased to 4.91 cm2/Vs, the Ion/Ioff ratio was enhanced from 4.5 × 105 to 2.1 × 106, the threshold voltage improved from − 1.44 to − 0.25 V, and the subthreshold swing was reduced from 1.21 to 0.61 V/dec. In conclusion, IZO TFTs with improved performance can be prepared using a femtosecond laser pre-annealing process, which has great potential for fabricating low-cost, high-performance devices.

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Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method

Cited by 10 publications

References 42 publications

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

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Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method

Cited by 10 publications

References 42 publications

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

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Low‐Temperature Atomic Layer Deposition of High‐k SbO_x for Thin Film Transistors