Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device

Mahi, K.; Plasmas, Oran Laboratoire de Physique des; Messani, B.; Aït‐Kaci, H.

doi:10.21272/jnep.11(4).04030

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2024

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“…Many different techniques have been suggested in the literature to extract these parameters from measurements of current density-voltage curves under illumination [1][2][3][4][5][6][7][8]. If we take the example of the standard method, it is widely used to extract the m and Js parameters of a solar cell from the analysis of the linear part of the current density-voltage curve.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Mahi¹,

Aït‐Kaci²

2021

J. Nano- Electron. Phys.

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Section: Introductionmentioning

confidence: 99%

“…A number of methods were previously mentioned which use new equations or functions mathematically obtained from a modification of the expression of the J-V characteristic of a solar cell [6][7][8][9]. Sometimes, these types of methods use a one-exponential solar cell model.…”

Section: Introductionmentioning

confidence: 99%

Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Mahi¹,

Aït‐Kaci²

2021

J. Nano- Electron. Phys.

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PbO Based MIS Nanostructure Device C-V and I-V Characteristics; Calculation Techniques, Comparisons

Selçuk

2024

GU J Sci, Part A

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The electrical properties of an Al/PbO/p-Si nanostructure forming PbO based diode of MIS-type (metal-insulator semiconductor) diode have been investigated. This particular diode structure is relatively new and has limited documentation in the existing literature. The prepared heterostructure, whose capacitance and current-voltage (C-V and I-V) characteristics were measured at room temperature in dark conditions. Key parameters such as the ideality factor n, barrier height ϕb and series resistance Rs were calculated using multiple methods, including the Standard, Norde, Lien-So-Nicolet, and Cheung techniques. These parameters provided insight into the molecular dynamics influencing the electrical characteristics of the diode. The annealing process at 290°C for 20 minutes was found to have a significant impact on the electrical behaviour of the sample. This study highlights the potential of PbO-based diodes for use in high-performance nanostructure devices.

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Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device

Cited by 2 publications

References 0 publications

Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

PbO Based MIS Nanostructure Device C-V and I-V Characteristics; Calculation Techniques, Comparisons

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