Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

Abstract

In order to analyze the trap in the multi-quantum well (MQW) consisting of a GaN-InGaN pair, the extraction of the location and energy level of the trap using random-telegraph-noise experiment was presented. Through the simplification of the band diagram of the complex MQW into an approximate structure, the equation for the location and the energy level of the trap was expressed as simply as possible. As a result of the extraction, we found that the traps of each sample are located very close to p-GaN or n-GaN interfaces.Index Terms-Defect, Fermi level, light-emitting diode (LED), multiple-quantum well (MQW), nonradiative recombination, random telegraph noise (RTN), trap, tunneling.

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

“…[32,33] For example, noise analysis was used to figure out a trap distribution inside the channel material of field-effect transistors and at interfaces of light-emitting diodes. [34,35] Additionally, the magnitude of current noise is sensitive to the geometry of the current path; it has been applied to study conducting filaments in resistive memory devices through scaling analysis. [32,36,37] In this study, we observe and systematically analyze the noise scaling in various resistance states in perovskite unipolar resistive memory devices consisting of MAPbI 3 thin film as the active layer and a pair of symmetrical Au electrodes.…”