Extraction of net acceptor type trap density in semi-insulating GaN layers grown on Si substrate by DC I-V measurement

Abstract

A simple quantitative method is proposed to estimate net acceptor‐type trap density (NT–ND, where NT denotes a gross acceptor‐type trap density, and ND denotes a donor density) in semi‐insulating GaN layers, widely used as the electron channel layer in AlGaN/GaN heterojunction field‐effect‐transistors. The DC current–voltage characteristics of a semi‐insulating GaN layer on a Si wafer have a threshold voltage (VTH). Band diagram simulation reveals that NT–ND determines VTH, and hence, the NT–ND in semi‐insulating GaN films can be experimentally estimated by measuring VTH.

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si

“…Figure 7 shows the vertical leakage flowing through the unit area from the backgate to source with a positive V GS being applied. Note that vertical leakage with negative and positive V GS are limited by AlN/Si barrier and electron trapping effect of GaN buffer layer, respectively [24], [25]. Thus, positive V GS ware chosen to evaluate each semi-insulating GaN layers.…”

Nanolasers Incorporating CoxGa0.6–xZnSe0.4 Nanoparticle Arrays with Wavelength Tunability at Room Temperature

“…Semiconductor nanolasers is the one purpose of microcavities fabrication in some areas, attracting a lot of interest due to their potential importance for many applications. , The III–V group materials are usually used as the microcavities such as the Ga-composed materials because they are very suitable to emit or stimulate nanolaser . Meanwhile, the better semiconductor property can be expressed through incorporation of transition metal (TM) elements (i.e., Co, Ni, Zn, Cd).…”

“…25,26 The III−V group materials are usually used as the microcavities such as the Ga-composed materials because they are very suitable to emit or stimulate nanolaser. 27 Meanwhile, the better semiconductor property can be expressed through incorporation of transition metal (TM) elements (i.e., Co, Ni, Zn, Cd). ZnS or ZnSe has been extensively used in a large number of infrared materials such as satellite communication, medical diagnosis, and sensing detection.…”