Extraction of optical constants of zinc oxide thin films by ellipsometry with various models

Liu, Y.C.; Hsieh, J.H.; Tung, S. K.

doi:10.1016/j.tsf.2005.10.089

Cited by 118 publications

(56 citation statements)

References 26 publications

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“…As revealed by Fig. 1, no absorption is expected below the band gap energy (≈3 eV), and there is a smooth dispersion for the real part of the dielectric function ( 1 ), which allows the use of a Cauchy model in this wavelength range [16]. Ref.…”

Section: Resultsmentioning

confidence: 87%

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Approaches to calculate the dielectric function of ZnO around the band gap

et al. 2014

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Being one of the most sensitive methods for optical thin film metrology ellipsometry is widely used for the characterization of zinc oxide(ZnO), a key material for optoelectronics, photovoltaics, printable electronics and in a range of critical applications. The dielectric function of ZnO has a special feature around the band gap dominated by a relatively sharp absorption feature and an excitonic peak. In this work we summarize and compare direct (point-bypoint) and parametric approaches for the description of the dielectric function. We also investigate how the choice of the wavelength range influences the result, the fit quality and the sensitivity. Results on ZnO layers prepared by sputtering are presented.

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Section: Resultsmentioning

confidence: 87%

“…Ref. [16] is an example for the description of the dielectric function of ZnO with the Cauchy model below the band gap energy range. We have described the ZnO layer with the Cauchy dispersion:…”

Section: Resultsmentioning

confidence: 99%

Approaches to calculate the dielectric function of ZnO around the band gap

et al. 2014

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“…2. The optical properties of ZnO [9] and CdS [10] are cited from references. We refer to [11] for the refractive index of the compound CuIn(0.69)Ga(0.31)Se2 and for being self-contained the data are plotted in Fig.…”

Section: Fem For Rigorous Electromagnetism Modelingmentioning

confidence: 99%

“…Though ZnO [9] and CdS [10] do not absorb light above 600 nm in wavelength, their layer thickness influences the amount of light absorbed in the active layer. The thickness of the ZnO layer determines the primary reflection by the cell stack.…”

Section: Effect Of Variation Of Top Window Layer Thicknessmentioning

confidence: 99%

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

Xu¹,

Wachters²,

Deelen³

et al. 2014

Opt. Express

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Abstract:We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

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“…Various theoretical models have been used to determine the optical properties of ZnO thin films [20,21]. In our case, the experimental results are adjusted to the theoretical ones using the Cauchy formalism.…”

Section: Ellipsometry Investigationsmentioning

confidence: 99%