Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

Pace, Loris; Defrance, N.; Videt, Arnaud; Idir, Nadir; Jaeger, J.C. de; Avramovic, Vanessa

doi:10.1109/ted.2019.2909152

Cited by 20 publications

(9 citation statements)

References 17 publications

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“…In order to increase attention for high‐temperature and high‐power applications at high frequencies, the kink effects are investigated in the output reflection coefficient (S 22 ) and the short‐circuit current gain (h 21 ) to be shown how these phenomena affect the applications of electronic devices . At first, the S parameters are analyzed completely that S 11 and S 22 on Smith charts and S 21 and S 12 on polar plots are reported . The S parameters are investigated from 1 KHz to 100 GHz at V DS = 20 V and V GS = −1.5 V and as it is shown that the kink effect has the impressive influence on all the S parameters in Figure .…”

Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

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Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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“…S-parameter characterization has demonstrated a good accuracy to extract low inductance values in the nanohenry range up to the gigahertz [20,21]. In order to perform accurate S-parameter measurements on a PCB commutation loop, test fixtures associated with a specific calibration method were developed.…”

Section: Calibration Proceduresmentioning

confidence: 99%

“…The proposed model is based on EM/circuit co-simulations and an experimental extraction of the parasitic inductance including GaN device packaging effects using S-parameter measurements over the frequency range 1-500 MHz. The S-parameters method is an accurate microwave measurement technique showing accuracy to extract parasitics in power devices [20][21][22][23]. In this study, it is proposed to extend existing techniques to the characterization of parasitic elements in a commutation cell.…”

Section: Introductionmentioning

confidence: 99%

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

et al. 2021

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Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

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“…SPICE-based simulation tools, PSIM and ANSYS Simplorer are among standard circuit simulation tools. The parameters for these models are extracted from measurements and/or the device datasheet [57], [58].…”

Section: B Switching Devicesmentioning

confidence: 99%

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

2020

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Electromagnetic interference issues are associated with high-speed switching of power converters. EMI modeling is an essential tool to study and control the EMI emission, enabling more efficient solutions. A comprehensive review and comparison of different modeling approaches for conducted emissions are provided in this paper, which can be used as a design guideline for engineers. For a motor drive application, common mode and differential mode conducted emissions are studied, and dominant noise production mechanisms are identified. Moreover, a review of various modeling techniques is presented for the main parasitic components of the system. Finally, time domain and frequency domain analysis approaches are explored along with the equivalent circuits which enable fast prediction of EMI emissions. This paper intends to help the reader develop an organized understanding of conducted emission modeling to assist them with a more efficient and electromagnetically-compatible design. INDEX TERMS Circuit modeling, common mode, conducted emission, differential mode, electromagnetic interference (EMI), motor drive inverters.

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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

Cited by 20 publications

References 17 publications

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

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